Status and challenges of multi-junction solar cell technology
The ongoing energy transition to curb carbon dioxide emissions and meet the increasing
energy demands have enhanced the need for integration of renewable energy into the …
energy demands have enhanced the need for integration of renewable energy into the …
Controlled spalling-based mechanical substrate exfoliation for III-V solar cells: A review
J Chen, CE Packard - Solar Energy Materials and Solar Cells, 2021 - Elsevier
Controlled spalling is a fast process that can mechanically exfoliate III-V semiconductor
layers from their host wafer substrates and has the potential to produce high power-density …
layers from their host wafer substrates and has the potential to produce high power-density …
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
Today's dominant photovoltaic technologies rely on single-junction devices, which are
approaching their practical efficiency limit of 25–27%. Therefore, researchers are …
approaching their practical efficiency limit of 25–27%. Therefore, researchers are …
Wide‐bandgap perovskite/gallium arsenide tandem solar cells
Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their
merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their …
merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their …
Mechanical stacked GaAs//CuIn1−yGaySe2 three‐junction solar cells with 30% efficiency via an improved bonding interface and area current‐matching technique
K Makita, Y Kamikawa, T Koida… - Progress in …, 2023 - Wiley Online Library
Multijunction (MJ) solar cells have attracted considerable attention as next‐generation solar
cells. III–V‐based MJ solar cells connected to heterogeneous cells, such as GaAs//Si and …
cells. III–V‐based MJ solar cells connected to heterogeneous cells, such as GaAs//Si and …
24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy
Abstract A 24%‐efficient single‐junction GaAs solar cell grown directly on a faceted, spalled
(100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy …
(100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy …
Low-cost approaches to III–V semiconductor growth for photovoltaic applications
III–V semiconductors form the most efficient single-and multijunction photovoltaics. Metal–
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …
III‐V//CuxIn1−yGaySe2 multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive …
K Makita, Y Kamikawa, H Mizuno… - Progress in …, 2021 - Wiley Online Library
Multijunction (MJ) solar cells achieve high efficiencies by effectively utilizing the solar
spectrum. Previously, we have developed III‐V MJ solar cells using smart stack technology …
spectrum. Previously, we have developed III‐V MJ solar cells using smart stack technology …
Design of planarizing growth conditions on unpolished and faceted (100)-oriented GaAs substrates using hydride vapor phase epitaxy
We performed a design of experiments (DoE) analysis to determine the effect of various
growth parameters on in situ planarizing overgrowth of rough substrates using hydride vapor …
growth parameters on in situ planarizing overgrowth of rough substrates using hydride vapor …
GaAs solar cells grown by hydride vapor-phase epitaxy and the development of GaInP cladding layers
The high cost of high-efficiency III-V photovoltaic devices currently limits them to niche
markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged …
markets. Hydride vapor-phase epitaxy (HVPE) growth of III-V materials recently reemerged …