Electron device modeling requires accurate descriptions of parasitic passive structures
connecting the intrinsic electron device to the external world. In conventional approaches …

This work presents the effect of temperature change on the capacitance of silicon PIN diodes
and the resulting change in performance of RF limiters at very high frequency (VHF). Device …

A new multibias HEMT small-signal model extraction method is proposed. The approach,
based on scaling rules, combines direct extraction techniques and a particle swarm …

This paper describes a new methodology for the extraction of an extrinsic parasitic network
suitable for scalable electron device models. The extraction procedure is based on the data …

A practical technique for separating the drain‐pad capacitance from the merged capacitance
of drain pad, gate‐to‐drain, and drain‐to‐source of a pinched‐off cold FET is presented …

A statistical approach to the problem of parameter extraction of small-signal FET models is
presented. This approach makes it possible to accurately assess parameter estimates and …

A multibias approach for HEMT small-signal model extraction is proposed. The method is
based on scaling rules and uses a hybrid direct extraction/particle swarm optimization …

Almost all computer-aided RF and microwave circuit design work relies on small-signal
equivalent circuit models [1](see Chapters 3 and 5). These models are used to replicate, as …

A new adaptive measurement algorithm is described for the control of an automated S‐
parameter measurement set‐up used to characterize transistors for non‐linear modelling …

Nonlinear transistor modeling is becoming increasingly popular due to the demand for high
linearity and high efficiency microwave amplifiers. The available models often fail to …