An analytical modeling of drain current for single material surrounded gate nanoscale SOI MOSFET

Numerical model of dielectric engineered triple metal source/drain pocket doped nanowire (DETMS/DPDN) FET based biosensor

K Sirohi, S Singh - Silicon, 2022 - Springer
Abstract The Numerical Model of Dielectric Engineered Triple Metal Source/Drain Pocket
Doped Nanowire (DETMS/DPDN) FET Based Biosensor are investigated in this brief. The …
被引用次数：3 相关文章 所有 2 个版本

Analytical model of triple metal stack engineered pocket dielectric gate all around (TMSEPDGAA) MOSFET for improved analog applications

D Kumar, S Singh - Silicon, 2021 - Springer
In this brief, we have explored the impact of Triple Metal Stack Engineered Pocket Dielectric
Gate All Around (TMSEPDGAA) MOSFET for Improved Analog Applications. It is so found …
被引用次数：5 相关文章