A pathway to enable exponential scaling for the beyond-CMOS era

JP Wang, SS Sapatnekar, CH Kim, P Crowell… - Proceedings of the 54th …, 2017 - dl.acm.org
Many key technologies of our society, including so-called artificial intelligence (AI) and big
data, have been enabled by the invention of transistor and its ever-decreasing size and ever …

Thermal contribution in the electrical switching experiments with heavy metal/antiferromagnet structures

P Sheng, Z Zhao, OJ Benally, D Zhang… - Journal of Applied …, 2022 - pubs.aip.org
We examine the thermal origin of the detected “saw-tooth” shaped Hall resistance (⁠ R xy⁠)
signals in the spin–orbit torque switching experiment for antiferromagnetic MnN. Compared …

Resistive Switching in Semimetallic SrIrO3 Thin Films

V Fuentes, B Vasić, Z Konstantinovic… - ACS Applied …, 2019 - ACS Publications
Local electrical properties, measured by conductive atomic force microscopy, of semimetallic
SrIrO3 thin films are reported. The appearance of an Anderson-type metal–insulator …

Antiferromagnetic spintronics: From metals to functional oxides

M Tsoi - Low Temperature Physics, 2023 - pubs.aip.org
Antiferromagnetic spintronics exploits unique properties of antiferromagnetic materials to
create new and improved functionalities in future spintronic applications. Here, we briefly …

[HTML][HTML] Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

S Shen, M Williamson, G Cao, J Zhou… - Journal of Applied …, 2017 - pubs.aip.org
A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-
doped Mott insulator Ca 2 RuO 4. An applied electrical bias was shown to reduce the DC …

Exploring the energy landscape of resistive switching in antiferromagnetic

M Williamson, S Shen, G Cao, J Zhou, JB Goodenough… - Physical Review B, 2018 - APS
We study the resistive switching triggered by an applied electrical bias in the
antiferromagnetic Mott insulator S r 3 I r 2 O 7. The switching was previously associated with …

Spintronics Devices for Advanced Memory and Computing Applications

Z Zhao - 2021 - search.proquest.com
Spintronics, as a beyond-CMOS technology, provides many possibilities for the next-
generation information storage and processing. This thesis focuses on the development of …

[图书][B] Electrical Bias Driven Effects for Spintronic Applications: Ferromagnetic and Antiferromagnetic Materials

MC Williamson - 2019 - search.proquest.com
The ever-present demand for computing technology advancement has not only compelled
progress toward the refinement of conventional CMOS routes, but has also driven new, less …

[图书][B] Transport Studies on Transition-Metal-Oxide Antiferromagnets from a Perspective of Applications in Memory Technology

S Shen - 2019 - search.proquest.com
Antiferromagnetic spintronics offers a promise of more robust, stray-field-free and ultra-high-
speed applications, eg in memory technology. Transition metal oxides (TMOs) represent a …

[HTML][HTML] Evidence of resistive switching into a dynamical state in antiferromagnetic iridates

M Williamson, S Shen, G Cao, J Zhou, M Tsoi - AIP Advances, 2019 - pubs.aip.org
We investigate the electrically-driven switching between low and high resistance states in
antiferromagnetic Sr 3 Ir 2 O 7 single crystals. We demonstrate that the switching state at …