A highly linear temperature sensor operating up to 600° C in a 4H-SiC CMOS technology
In this work, a highly linear temperature sensor based on a silicon carbide (SiC) pn diode is
presented. Under a constant current biasing, the diode has an excellent linear response to …
presented. Under a constant current biasing, the diode has an excellent linear response to …
Correlation between anode area and sensitivity for the TiN/GaN Schottky barrier diode temperature sensor
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate
the temperature sensing mechanism. All the circular diodes present good stability over a …
the temperature sensing mechanism. All the circular diodes present good stability over a …
Quasi-vertical diamond temperature sensor by using Schottky–pn junction structure diode
W Xie, L He, Y Ni, G Li, Q Wang, S Cheng… - Materials Science in …, 2022 - Elsevier
A Schottky–pn junction structure diode (SPND) has been fabricated on HPHT Ib (001)
diamond substrate for temperature sensor application. The forward current-voltage …
diamond substrate for temperature sensor application. The forward current-voltage …
P-NiO/n-GaN heterostructure diode for temperature sensor application
p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and
comprehensively characterized for temperature sensor application. The circular diodes with …
comprehensively characterized for temperature sensor application. The circular diodes with …
Vertical GaN-based temperature sensor by using TiN anode Schottky barrier diode
Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a
thermally stable TiN anode. The current-voltage characteristics of the diode measured at …
thermally stable TiN anode. The current-voltage characteristics of the diode measured at …
An Efficient 4H-SiC photodiode for UV sensing applications
In this paper, we report experimental findings on a 4H-SiC-based pin photodiode. The
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …
Effect of anode material on the sensitivity of GaN Schottky barrier diode temperature sensor
GaN Schottky barrier diode (SBD) temperature sensors with TiN, Ni, and NiN anodes were
fabricated in this study to evaluate the effect of anode material and inhomogeneous interface …
fabricated in this study to evaluate the effect of anode material and inhomogeneous interface …
Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC
Y Zhang, T Guo, X Tang, J Yang, Y He… - Journal of Alloys and …, 2018 - Elsevier
Abstract In this paper, Pt/TaSi 2/Ni/Ti/Ni/SiC and Pt/Ti/SiC simultaneous ohmic contacts to n-
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …
Thermoresistance of p‐Type 4H–SiC Integrated MEMS Devices for High‐Temperature Sensing
There is an increasing demand for the development and integration of multifunctional
sensing modules into power electronic devices that can operate in high temperature …
sensing modules into power electronic devices that can operate in high temperature …
Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts
A high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated
using additively printed metal contacts. The surface morphology and electrical conductivity …
using additively printed metal contacts. The surface morphology and electrical conductivity …