Abstract Nowadays, two-dimensional crystals (2D materials) and structures with quantum
dots (0D materials) are considered as one of the most promising materials for electronics …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

In this paper questions of optimization of growth conditions in the method of molecular beam
epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As …

The solid-state dewetting phenomenon was used to obtain submicron-and micron-sized
SiGe particle arrays by the Ge deposition on Si (100) substrates. Their transmission and …

In this paper theoretical modeling of formation and growth of germanium–silicon quantum
dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out …

The dewetting phenomenon that occurs during annealing of Ge films after their deposition
on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into …

Germanium/silicon systems are among the most promising materials for development of
current semiconductor electronics and photonics. Structures with germanium quantum dots …

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers.
Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while …

The surface morphology of Ge layers grown by Ge deposition on the Si (001) and Si (111)
surfaces covered with ultrathin SiO 2 films is studied with scanning tunneling microscopy. It …

The formation of three-dimensional (3D) structures during Ge deposition on Si (111) at about
800 C is studied with scanning tunneling, Kelvin probe and electron microscopies, and …