Germanium is a widely used material for tunnel FETs because of its small band gap and
compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is …

We investigate a promising tunnel FET configuration having a gate on the source only,
which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current …

This paper reports on the integration of vertical nTunnel FETs (TFETs) with SiGe hetero-
junction and analyzes the presence of trap-assisted tunneling impacting the device …

Temperature is a thermal parameter which affects the device performance. This paper
presents the impact of the temperature variation on the electrical characteristics such as …

High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs
is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling …

Nanoimprint lithography (NIL) is a promising method for the fabrication of
micro/nanostructures through a simple, low-cost, and high throughput process. Imprinted 2D …

We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET,
which leads to enhanced on-current I ON. However, LTFET suffers from severe ambipolar …

Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced
under gate electrode to electrically sense the characteristics of biomolecules, have been …