Microstructure and interface analysis of emerging Ga (Sb, Bi) epilayers and Ga (Sb, Bi)/GaSb quantum wells for optoelectronic applications
Using transmission electron microscopy, we present an in-depth microstructural analysis of
a series of Ga (Sb, Bi) epilayers and Ga (Sb, Bi)/GaSb quantum wells grown on GaSb (001) …
a series of Ga (Sb, Bi) epilayers and Ga (Sb, Bi)/GaSb quantum wells grown on GaSb (001) …
Dilute bismide and nitride alloys for mid-IR optoelectronic devices
S Wang, R Kudrawiec, C Chi, L Zhang, X Zhang… - Mid-infrared …, 2020 - Elsevier
Dilute bismide and nitride provide flexible bandgap and strain engineering, owing to their
unique physical properties, and are attractive for mid-IR (2–12 μm) optoelectronic device …
unique physical properties, and are attractive for mid-IR (2–12 μm) optoelectronic device …
Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots
T Hidouri, I Mal, DP Samajdar, F Saidi… - Superlattices and …, 2019 - Elsevier
In this work, the low temperature PL spectrum of GaSbBi ternary alloys and GaSbBi/GaAs
Quantum Dots (QDs) are investigated using two different mathematical models. The first …
Quantum Dots (QDs) are investigated using two different mathematical models. The first …
[PDF][PDF] 阱内δ 掺杂GaSbBi 单量子阱红外发光效率的光致发光光谱研究
马楠, 窦程, 王嫚, 朱亮清, 陈熙仁, 刘锋, 邵军 - 红外与毫米波 …, 2022 - researching.cn
采用变激发功率红外光致发光(Photoluminescence, PL) 光谱方法研究四个不同阱内δ
掺杂面密度的GaSb0. 93Bi0. 07/GaSb 单量子阱(Single Quantum Well, SQW) …
掺杂面密度的GaSb0. 93Bi0. 07/GaSb 单量子阱(Single Quantum Well, SQW) …
Transmission electron microscopy of Ga (Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness
We analyze the microstructure of a series of Ga (Sb, Bi)/GaSb quantum wells (QW) with
varying Bi content and QW thicknesses using transmission electron microscopy. The …
varying Bi content and QW thicknesses using transmission electron microscopy. The …
Molecular beam epitaxy growth of GaSb1-xBix without rotation
GaSb 1-x Bi x thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy
(MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across …
(MBE) without substrate rotation. Bi composition is found to vary from 2.76% to 3.98% across …
GaSbBi alloys and heterostructures: fabrication and properties
Abstract Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their
properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into …
properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into …