In this paper, to solve an important issue of low ON-state current in the nickel silicide (NiSi)
metal source/drain Schottky barrier (SB) MOSFET (SBMOS), we have reported a novel …

In this article, a novel reconfigurable field-effect transistor with an asymmetric underlap
channel extension at drain side (UCED-RFET) is proposed for the first time. The influence of …

This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET)
as label free biosensor applications. In a proposed device, we have created a nanogap …

In this paper, for the first time, a novel ferroelectric schottky barrier tunnel FET (Fe SB-TFET)
is proposed and investigated. The Fe SB-TFET consists of ferroelectric gate stack with highly …

The proper function of the integrated circuit (IC) in an inhibiting electromagnetic environment
has always been a serious concern throughout the decades of revolution in the world of …

In this paper, a simulation study to suppress the ambipolar current of the Schottky Barrier
(SB) MOSFET is presented. In this work, a dual metal gate device structure is used. The gate …

This paper reports a novel device structure for charge plasma based Schottky Barrier (SB)
MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the …

In this manuscript, we have proposed and investigated a double pocket SB TFET using
dielectric modulation for bio-sensor applications. In the proposed device, we have employed …

The scaling of silicon based doped devices has reached to verge of its limits because of the
severity of short channel effects, increment in source/drain resistance, abrupt doping profile …

In this work, we have represented a simulation study that includes the device and circuit-
level performance improvements of SOI Schottky barrier (SB) MOSFETs. We have …