Electronic transport in periodically δ‐doped GaAs layers
JC Egues, JC Barbosa, AC Notari, P Basmaji… - Journal of applied …, 1991 - pubs.aip.org
The increasing interest in a two-dimensional electrongas system for device application has
motivated the investigation of semiconductor structures employing narrow and sharp doping …
motivated the investigation of semiconductor structures employing narrow and sharp doping …
Observation of trap states in Er-doped InP by photoreflectance
J Nukeaw, J Yanagisawa, N Matsubara… - Applied physics …, 1997 - pubs.aip.org
We have investigated room-temperature photoreflectance (PR) spectra in Er-doped InP
grown by low-pressure organometallic vapor phase epitaxy. A new feature is clearly …
grown by low-pressure organometallic vapor phase epitaxy. A new feature is clearly …
Observation of optical transition energy in ZnSe/tris (8-hydroxyquinoline) aluminum (Alq3)/ZnSe single quantum wells by photoreflectance spectroscopy
J Nukeaw, K Upprakhot, S Rahong, B Tunhoo… - Physica E: Low …, 2004 - Elsevier
The optical transition energy in ZnSe/tris (8-hydroxyquinoline) aluminum (Alq3)/ZnSe single
quantum wells (SQW) thin films with well thickness from 5 to 50 nm was investigated by …
quantum wells (SQW) thin films with well thickness from 5 to 50 nm was investigated by …
Electroreflectance and photocurrent measurement of ZnSe/Alq3/TPD heterostructure on Si-substrate
W Pecharapa, A Keawprajak, N Kayunkid… - Materials Science and …, 2005 - Elsevier
The optical transition energy in ZnSe/tris (8-hydroxyquinoline) aluminum (Alq3)/N, N′-bis (3-
methylphenyl)-N, N′-diphenyl-benzidine (TPD) heterostructure were investigated by room …
methylphenyl)-N, N′-diphenyl-benzidine (TPD) heterostructure were investigated by room …
Photoreflectance study of InP/InGaAs (1–5 ML)/InP single quantum well
J Nukeaw, R Asaoka, Y Fujiwara, Y Takeda - Thin solid films, 1998 - Elsevier
Room-temperature photoreflectance (PR) measurements were successfully used to
investigate optical transition energies in InP/InGaAs (1–5 ML)/InP single quantum wells …
investigate optical transition energies in InP/InGaAs (1–5 ML)/InP single quantum wells …
Quantum Confinement Effect of Alq3/ZnSe Heterostructures
J NUKEAW - Journal of Metals, Materials and Minerals, 2003 - jmmm.material.chula.ac.th
The quantum confinement energy in tris (8-hydroxyquinoline) aluminum (Alq3)/ZnSe
heterostructures as single quantum wells (SQW) thin films grown by an e-beam evaporator …
heterostructures as single quantum wells (SQW) thin films grown by an e-beam evaporator …
[PDF][PDF] Growth and Characterization of Novel Optoelectronic Materials Based on II-VI Inorganic/Organic Heterostructures
W Pecharapa, A Keawprajak, N Kayunkid, S Rahong… - thaiscience.info
Novel optoelectronic materials based on II-VI inorganic/organic low-dimensional
heterostructure were successfully grown by electron beam evaporator. The structures were …
heterostructure were successfully grown by electron beam evaporator. The structures were …
[PDF][PDF] Characterization of InP/InGaAs/InP Single Quantum Wells Grown by OMVPE
J Nukeaw, S Kusamran, A Srongprapa, S Akavipat… - nkw.ac.th
The optical transition energies in InP/InGaAs/InP single quantum wells (SQWs) grown by
organometallic vapor phase epitaxy (OMVPE) with well thicknesses from 1 to 5 monolayers …
organometallic vapor phase epitaxy (OMVPE) with well thicknesses from 1 to 5 monolayers …
[引用][C] Dependence of the Width of a δ‐Impurity Layer on Position in an InxGO1−xAs/GaAs Strained Quantum Well
AC Notari, B Schrappe, P Basmaji… - physica status solidi …, 1991 - Wiley Online Library
Dependence of the Width of a Îâ•’Impurity Layer on Position in an In<sub>x</sub>GO<sub>1â‹™x</
Page 1 Short Notes K119 phys. stat. sol. (a) 126, K119 (1991) Subject classification: 68.55; …
Page 1 Short Notes K119 phys. stat. sol. (a) 126, K119 (1991) Subject classification: 68.55; …