In this review, we examine the contributions of surface science research to the
understanding of metal-semiconductor interfaces. In particular, we survey conventional …

Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

Almost all metal-semiconductor or Schottky contacts exhibit rectifying behaviour which is
caused by a depletion layer on the semiconductor side of the interface. The electronic …

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor,
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …

Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied.
Schottky-barrier heights of Ni Si 2 layers grown under ultrahigh-vacuum conditions on n-type …

Continuous and planar single-crystal Ni Si 2 films (< 60 Å thick) have been grown on Si
(100) and (111) by ultrahigh-vacuum techniques. Nickel deposition (< 20 Å) on atomically …

Rapid heating with an electron beam has been used to react overlayers of rare-earth (RE)
metals with (Ill) Si, forming epitaxial layers of silicides ofY, Gd, Th, Dy, Ho, Er, Tm, Vb, and …

This review presents an overview on the recent progress achieved in the epitaxial growth of
Ni and Co silicides on Si (111) by UHV deposition techniques. While focusing on the …