Halide perovskite for low‐power consumption neuromorphic devices

I Raifuku, YP Chao, HH Chen, CF Lin, PE Lin… - …, 2021 - Wiley Online Library
The rapid emergency of data science, information technology, and artificial intelligence (AI)
relies on massive data processing with high computing efficiency and low power …

Prospect and challenges of analog switching for neuromorphic hardware

W Banerjee, RD Nikam, H Hwang - Applied Physics Letters, 2022 - pubs.aip.org
To inaugurate energy-efficient hardware as a solution to complex tasks, information
processing paradigms shift from von Neumann to non-von Neumann computing …

Dot‐product operation in crossbar array using a self‐rectifying resistive device

K Jeon, JJ Ryu, DS Jeong… - Advanced Materials …, 2022 - Wiley Online Library
Reducing computational complexity is essential in future computing systems for processing
a large amount of unstructured data simultaneously. Dot‐product operations using crossbar …

Two-and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements

H Kang, J Park, D Lee, HW Kim, S Jin… - Neuromorphic …, 2021 - iopscience.iop.org
Synaptic elements based on memory devices play an important role in boosting
neuromorphic system performance. Here, we show two types of fab-friendly HfO 2 material …

[HTML][HTML] Compliance-free, analog RRAM devices based on SnOx

SK Garlapati, FM Simanjuntak, S Stathopoulos… - Scientific Reports, 2024 - nature.com
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to
outperform conventional flash memory technology due to its performance, high aerial …

Variation Tolerant RRAM Based Synaptic Architecture for On-Chip Training

A Dongre, G Trivedi - IEEE Transactions on Nanotechnology, 2023 - ieeexplore.ieee.org
Neuromorphic computing has emerged as a better alternative for developing next-
generation artificial intelligent systems. Resistive Random Access Memory (RRAM) have …

Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation

D Bae, D Lee, S Kim, HD Kim - IEEE Access, 2022 - ieeexplore.ieee.org
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-
access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic …

[HTML][HTML] Assessment and improvement of the pattern recognition performance of memdiode-based cross-point arrays with randomly distributed stuck-at-faults

FL Aguirre, SM Pazos, F Palumbo, A Morell, J Suñé… - Electronics, 2021 - mdpi.com
In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive cross-point
array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) …

Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory

S Park, G Lee, Y Kwon, DI Suh, H Lee… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
As AI technology develops, it is necessary to verify the technical feasibility of Memory-
Centric convergence technology. Previously investigated resistive synaptic devices (RSDs) …

[HTML][HTML] Fabrication and characterization of silicon nano-tip memristor for low-power neuromorphic application

S Bang, S Kim, K Hong, KU Mohanan, S Cho… - AIP Advances, 2022 - pubs.aip.org
In this work, a memristor using Si nano-tip bottom electrode has been fabricated and
evaluated. Compared with the control device fabricated in a planar structure, the invented Si …