A new hybrid material, based on Er3+ exchanged zeolite L loaded with DFB molecules, is
proposed as an efficient emitter in the third telecommunication window. The close proximity …

This study reports the estimation of the inverted Er fraction in a system of Er doped silicon
oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence …

Er3+ ions and SnO2 nanocrystals co-doped silica thin films are prepared by an improved sol–
gel spin-coating method. With increase in annealing temperature, the related 1.54 μm …

We demonstrate a light emitting material platform based on rare-earth doping of Si-rich ZnO
thin films by magnetron sputtering, and we investigate the near-infrared emission properties …

We have fabricated a series of thin (~ 50 nm) erbium-doped (by ion implantation) silicon-rich
oxide films in the configuration that mitigates previously proposed mechanisms for loss of …

Enhancing second-order optical processes in Si-compatible materials is important for the
demonstration of innovative functionalities and nonlinear optical devices integrated on a …

The impact of rapid thermal annealing (RTA) in producing samples by sequential
implantation of Si and Er ions into a 200 nm SiO 2 layer combined with different annealing …

Indirect excitation of Er 3+ ions via energy transfer from silicon nano-clusters (Si-NCs) is
demonstrated in silicon rich oxynitride films with different Si excess concentrations. Excess …

Optical response of a rare earth (RE)-doped SiO 2 layer is known to deteriorate markedly at
room temperature due to RE clustering. The key challenge is therefore to probe the ongoing …

This study investigates the influence of the film thickness on the silicon-excess-mediated
sensitization of Erbium ions in Si-rich silica. The Er 3+ photoluminescence at 1.5 μm …