We review the hot-carrier effects and reliability problem in MOSFET. The mechanisms that
produce the substrate and gate current are discussed, and the various mechanisms for hot …

Transistor parametric drift due to conductionmode hot carrier degradation (HCD) in n-
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …

Evidence suggests that MOSFET degradation is due to interface-states generation by
electrons having 3.7 eV and higher energies. This critical energy and the observed time …

An empirical model for device degradation due to hot-carrier injection in submicron n-
channel MOSFET's is presented. Relationships between device degradation, drain voltage …

This paper presents a comparison of hot-carrier degradation experiments with simulations of
hot electron and hole emission into the oxide. It is shown that both the emission of holes and …

In this paper, we present an experimental analysis of the degradation induced by positive
bias temperature instability stress in GaN-based power high electron mobility transistors with …

The high drain-effect transistor characteristic observed after hot-carrier injection and
trapping in the oxide has been found to be due to the uneven trapped-carrier distribution …

This paper reviews low dielectric constant materials for interlayer dielectric films in ultralarge-
scale integrated circuit (ULSI) multilevel interconnections. The trends of ULSIs in the last …

Detailed measurements of hot-carrier gate current and its trapping effects were studied on
both n-and p-channel MOSFET's down to submicrometer channel lengths. Comparison of …

Device degradation due to hot-electron injection in n-channel MOSFET's is mainly caused
by mobility degradation and reduced mobile charges in the channel introduced by interface …