Laser Processing of Emerging Nanomaterials for Optoelectronics and Photocatalysis
Optoelectronics and photocatalysis are two rapidly developing photonic fields that are
revolutionizing green energy, medicine, communications, and robotics. To advance these …
revolutionizing green energy, medicine, communications, and robotics. To advance these …
Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
T Tabata, F Rozé, L Thuries, S Halty, PE Raynal… - Electronics, 2022 - mdpi.com
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D)
integration approaches, enabling continuous chip density increment and performance …
integration approaches, enabling continuous chip density increment and performance …
Pulsed laser annealing for advanced technology nodes: Modeling and calibration
K Huet, J Aubin, PE Raynal, B Curvers… - Applied Surface …, 2020 - Elsevier
Pulsed laser annealing is one of the promising low thermal budget approaches to overcome
process limitations and develop alternative schemes to achieve better device performance …
process limitations and develop alternative schemes to achieve better device performance …
[HTML][HTML] Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined
heating and melting are desirable. In semiconductor technologies the importance of LA …
heating and melting are desirable. In semiconductor technologies the importance of LA …
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
T Tabata, F Rozé, L Thuries, S Halty… - Applied Physics …, 2022 - iopscience.iop.org
Abstract Three-dimensional (3D) CMOS technology encourages the use of UV laser
annealing (UV-LA) because the shallow absorption of UV light into materials and the …
annealing (UV-LA) because the shallow absorption of UV light into materials and the …
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
P Badalà, S Rascunà, B Cafra, A Bassi, E Smecca… - Materialia, 2020 - Elsevier
Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength
of 308 nm to study interaction and reaction of the involved atomic species. With this intent …
of 308 nm to study interaction and reaction of the involved atomic species. With this intent …
Extension of spectral sensitivity of GeSn IR photodiode after laser annealing
Photo-detection in the near-infrared is commonly performed by Ge or InGaAs-based
photodetectors. Further extension of the detection range to the mid-infrared region can be …
photodetectors. Further extension of the detection range to the mid-infrared region can be …
Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal
The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using
an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we …
an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we …
Non-equilibrium growth of surface wrinkles emerging in an SiO2/Si stack during Si melting induced by UV nanosecond pulsed laser annealing
I Karmous, F Rozé, PE Raynal, K Huet… - ECS Journal of Solid …, 2022 - iopscience.iop.org
UV nanosecond pulsed laser annealing (UV-NLA) is demonstrating clear benefits in the
emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly …
emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly …
Impact of nanosecond laser annealing on vacancies in electroplated cu films studied by monoenergetic positron beams
A Uedono, T Nogami, O Gluschenkov… - Journal of Applied …, 2023 - pubs.aip.org
Positron annihilation was used to probe vacancy-type defects in electrodeposited Cu films
after nanosecond pulse laser annealing. For the as-deposited Cu film, we identified the …
after nanosecond pulse laser annealing. For the as-deposited Cu film, we identified the …