Laser Processing of Emerging Nanomaterials for Optoelectronics and Photocatalysis

A Lipovka, A Garcia, E Abyzova… - Advanced Optical …, 2024 - Wiley Online Library
Optoelectronics and photocatalysis are two rapidly developing photonic fields that are
revolutionizing green energy, medicine, communications, and robotics. To advance these …

Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices

T Tabata, F Rozé, L Thuries, S Halty, PE Raynal… - Electronics, 2022 - mdpi.com
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D)
integration approaches, enabling continuous chip density increment and performance …

Pulsed laser annealing for advanced technology nodes: Modeling and calibration

K Huet, J Aubin, PE Raynal, B Curvers… - Applied Surface …, 2020 - Elsevier
Pulsed laser annealing is one of the promising low thermal budget approaches to overcome
process limitations and develop alternative schemes to achieve better device performance …

[HTML][HTML] Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

D Ricciarelli, G Mannino, I Deretzis, G Calogero… - Materials Science in …, 2023 - Elsevier
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined
heating and melting are desirable. In semiconductor technologies the importance of LA …

Microsecond non-melt UV laser annealing for future 3D-stacked CMOS

T Tabata, F Rozé, L Thuries, S Halty… - Applied Physics …, 2022 - iopscience.iop.org
Abstract Three-dimensional (3D) CMOS technology encourages the use of UV laser
annealing (UV-LA) because the shallow absorption of UV light into materials and the …

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

P Badalà, S Rascunà, B Cafra, A Bassi, E Smecca… - Materialia, 2020 - Elsevier
Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength
of 308 nm to study interaction and reaction of the involved atomic species. With this intent …

Extension of spectral sensitivity of GeSn IR photodiode after laser annealing

P Ščajev, P Onufrijevs, A Mekys, T Malinauskas… - Applied Surface …, 2021 - Elsevier
Photo-detection in the near-infrared is commonly performed by Ge or InGaAs-based
photodetectors. Further extension of the detection range to the mid-infrared region can be …

Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal

T Tabata, J Aubin, K Huet, F Mazzamuto - Journal of Applied Physics, 2019 - pubs.aip.org
The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using
an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we …

Non-equilibrium growth of surface wrinkles emerging in an SiO2/Si stack during Si melting induced by UV nanosecond pulsed laser annealing

I Karmous, F Rozé, PE Raynal, K Huet… - ECS Journal of Solid …, 2022 - iopscience.iop.org
UV nanosecond pulsed laser annealing (UV-NLA) is demonstrating clear benefits in the
emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly …

Impact of nanosecond laser annealing on vacancies in electroplated cu films studied by monoenergetic positron beams

A Uedono, T Nogami, O Gluschenkov… - Journal of Applied …, 2023 - pubs.aip.org
Positron annihilation was used to probe vacancy-type defects in electrodeposited Cu films
after nanosecond pulse laser annealing. For the as-deposited Cu film, we identified the …