Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many
applications owing to its distinct abilities. They include uniform deposition of conformal films …

Chalcogenide thin films have been investigated and explored in the last several decades to
widen their use in optical, electronic, and optoelectronic device sectors. The phenomenon …

This article is devoted to completing the study of linear and nonlinear optical characteristics
of thermally evaporated a-Cu x Ge 20-x Se 40 Te 40, CGST,(0≤ x≤ 20 at.%) thin films. The …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Abstract Quaternary chalcogenide Ge 15-x Sb x Se 50 Te 35,(0.0≤ x≤ 15.0, at.%) thin films
are prepared using the thermal evaporation process under the residual vacuum pressure …

This work is dedicated to the deduction of many basic physical parameters of a-Ge 15-x Sb x
Se 50 Te 35 bulk and thin-film samples, GSST (0.0≤ x≤ 15.0 at. wt.%). Besides, study the …

Abstract Ge-Sb-Se-Te (GSST) materials have recently emerged as an efficient phase
change material (PCM) that displays various exceptional properties essential for numerous …

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting,
sequential reactions localized at the growing film surface. It guarantees exceptional …

This research aims at the study of strontium sulphide doped silver using 0.1 mol of strontium
chloride hexahydrate (SrCl2. 6H2O), Thioacetamide (C 2 H 5 NS), and 0.01 mol of silver …

Herein, the synthesis of MoTe 2 nanosheets by means of Atomic Layer Deposition (ALD) is
demonstrated for the first time. ALD enables tight control over the thickness and the …