An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT)
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect
transistors (TFETs) are fabricated. Tilted dopant implantation using the gate as a shadow …

Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free
interfaces, and step-like 2-D density of states. To exploit these features for the design of a …

Tunnel-FET (TFET) is a major candidate for beyond-CMOS technologies. In this paper, the
properties of the TFETs that affect analog circuit design are studied. To demonstrate how …

This paper investigates short-channel effects (SCEs) in double-gate tunnel FETs (TFETs)
using an analytic model that includes depletion in the source. It is shown that the drain bias …

A simple analytic model based on the Kane–Sze formula is used to describe the current–
voltage characteristics of tunnel field-effect transistors (TFETs). This model captures the …

Guided by the Wentzel-Kramers–Brillouin approximation for band-to-band tunneling (BTBT),
various performance boosters for Si TFETs are presented and experimentally verified. Along …

The concept and simulated device characteristics of tunneling field-effect transistors (TFETs)
based on III-nitride heterojunctions are presented for the first time. Through polarization …

In this paper, we identify the level shifter (LS) for voltage up-conversion from the ultralow-
voltage regime as a key application domain of tunnel FETs (TFETs). We propose a mixed …