Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications
Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …
Encapsulation strategies on 2D materials for field effect transistors and photodetectors
W Huang, Y Zhang, M Song, B Wang, H Hou… - Chinese Chemical …, 2022 - Elsevier
Abstract Two-dimensional (2D) layered materials provide a promising alternative solution for
overcoming the scaling limits in conventional Si-based devices. However, practical …
overcoming the scaling limits in conventional Si-based devices. However, practical …
Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors
Development of high-performance p-channel devices is in high demand for implementing
complementary metal-oxide semiconductor logic circuits. In this study, we propose a …
complementary metal-oxide semiconductor logic circuits. In this study, we propose a …
A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er2O3 Insulator Through Thermal Evaporation
Achieving the direct growth of an ultrathin gate insulator with high uniformity and high quality
on monolayer transition metal dichalcogenides (TMDCs) remains a challenge due to the …
on monolayer transition metal dichalcogenides (TMDCs) remains a challenge due to the …
Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability through Interface Engineering
J Jiang, Y Zhang, A Wang, J Duan, H Ji… - ACS Applied …, 2020 - ACS Publications
Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect
transistors (FETs) are extremely important for practical electronic applications. Interface …
transistors (FETs) are extremely important for practical electronic applications. Interface …
Encapsulation-enhanced switching stability of MoS2 memristors
The advent of big data and machine learning has created an exploding demand for parallel
processing. The lack of parallelism in von Neumann machines limits the processing of data …
processing. The lack of parallelism in von Neumann machines limits the processing of data …
Copper iodide and oxide semiconductor thin films patterned by spray-spin coating for fabricating complementary inverters: Improving stability with passivation layers
Recently, copper iodide (CuI) has been studied as a solution-processed p-type
semiconductor owing to its high hole mobility and low-temperature processability. With the …
semiconductor owing to its high hole mobility and low-temperature processability. With the …
Controllable doping and passivation of ZnO thin films by surface chemistry modification to design low-cost and high-performance thin film transistors
Solution-processed metal oxide thin-film transistors have become more popular as they can
be used to fabricate transparent and flexible electronics at low cost. However, additional and …
be used to fabricate transparent and flexible electronics at low cost. However, additional and …
Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe2 Thin Film Transistors via Electron Charge …
The development of transition metal dichalcogenides (TMDCs) and quantum dots (QDs) as
the promising semiconductor and emitter is carried out in diverse applications. Despite …
the promising semiconductor and emitter is carried out in diverse applications. Despite …
Room-temperature organic passivation for GaN-on-Si HEMTs with improved device stability
H Zhang, K Hu, Y Sun, L Yang, Z Huang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, we report an effective room-temperature passivation strategy for GaN-on-Si high-
electron-mobility transistors (HEMTs) to improve device stability by introducing a spin-coated …
electron-mobility transistors (HEMTs) to improve device stability by introducing a spin-coated …