Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Low-voltage tunnel transistors for beyond CMOS logic
AC Seabaugh, Q Zhang - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …
extending the performance of electronics systems. In particular, this review introduces and …
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on
gold-coated mica was investigated using conductive atomic force microscopy. Low-bias …
gold-coated mica was investigated using conductive atomic force microscopy. Low-bias …
Direct and indirect band-to-band tunneling in germanium-based TFETs
KH Kao, AS Verhulst… - … on Electron Devices, 2011 - ieeexplore.ieee.org
Germanium is a widely used material for tunnel FETs because of its small band gap and
compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is …
compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is …
Novel attributes of a dual material gate nanoscale tunnel field-effect transistor
In this paper, we propose the application of a dual material gate (DMG) in a tunnel field-
effect transistor (TFET) to simultaneously optimize the on-current, the off-current, and the …
effect transistor (TFET) to simultaneously optimize the on-current, the off-current, and the …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
A physics-based 2-D analytical model for surface potential, electric field, drain current,
subthreshold swing (SS) and threshold voltage of dual-material (DM) double-gate tunnel …
subthreshold swing (SS) and threshold voltage of dual-material (DM) double-gate tunnel …
Pseudo-two-dimensional model for double-gate tunnel FETs considering the junctions depletion regions
This paper presents a pseudo-2-D surface potential model for the double-gate tunnel field-
effect transistor (DG-TFET). Analytical expressions are derived for the 2-D potential, electric …
effect transistor (DG-TFET). Analytical expressions are derived for the 2-D potential, electric …
2D boron nitride: synthesis and applications
Hexagonal boron nitride (h-BN), a layered material isostructural to graphite, has similar
exotic properties like graphite. With single atom thick and alternating boron and nitrogen …
exotic properties like graphite. With single atom thick and alternating boron and nitrogen …