Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides
The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …
limits place extreme demands on the properties of all materials involved. The requirements …
Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …
stability because charge carriers originating from the semiconductors interact with defects in …
Toward sustainable ultrawide bandgap van der Waals materials: An ab initio screening effort
The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …
Dielectrics for two-dimensional transition-metal dichalcogenide applications
Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology?
Within the last decade, considerable efforts have been devoted to fabricating transistors
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …
Interface states in gate stack of carbon nanotube array transistors
Y Liu, S Ding, W Li, Z Zhang, Z Pan, Y Ze, B Gao… - ACS …, 2024 - ACS Publications
A deep understanding of the interface states in metal–oxide–semiconductor (MOS)
structures is the premise of improving the gate stack quality, which sets the foundation for …
structures is the premise of improving the gate stack quality, which sets the foundation for …
Controversial issues in negative bias temperature instability
In spite of 50 years of history, there is still no consensus on the basic physics of Negative
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge …
One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the
hysteresis in their transfer characteristics, which is typically associated with charge trapping …
hysteresis in their transfer characteristics, which is typically associated with charge trapping …