Many researchers are trying to create a low power, high stability, and high-speed static
random access memory (SRAM) cell. This paper introduces an SRAM cell consisting of 12 …

This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …

Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …

This paper aims to explore the design of a novel highly stable low-energy 10T (SLE10T)
SRAM cell for near-threshold operation. The latch core of the proposed design consists of a …

Modern system-on-chip-based applications require low-power/energy SRAMs for long-term
operation. To deal with this issue, near-threshold SRAM design is an effective approach. In …

Deep sub-micron memory devices play a crucial role in space electronic applications due to
their susceptibility to single-event upset and double-node upset types of soft errors. When a …

Abstract Design of circuits using graphene nanoribbon field-effect transistors (GNRFETs), as
promising next-generation devices, can improve total performance of a chip due to offering …

This paper investigates a novel highly stable and robust single-ended 10T SRAM cell
appropriate for low-power portable applications. The cell core of the proposed design is a …

In this paper, a hybrid memory architecture based on a new array of SRAM and resistive
random-access memory (RRAM) cells is proposed to perform in-memory computing by …

Higher charge mobility, gate control, and better electrostatics are the key reasons that make
carbon nanotube field effect transistor (CNTFET) a better candidate to become the …