We demonstrate DNA translocations through silicon nitride pores formed by simple chemical
etching on glass substrates using microscopic amounts of hydrofluoric acid. DNA …

Si is the most common dopant in (Al) GaN based devices acting as a donor. It has been
observed that Si induces tensile strain in (Al) GaN films, which leads to an increasing …

In this study, we report different SiH 4 flow condition effects on crystal, surface, optical, and
electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) …

The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111)
substrate by metalorganic chemical vapor deposition in combination with the insertion of a …

Dislocation reaction in a GaN layer grown on 4-in. Si (111) with AlGaN/AlN strained layer
superlattice was observed by transmission electron microscopy. The reaction between a …

SiN x interlayer was introduced in the epitaxial process of (11 2‾ 2) AlGaN film, and the
influences of SiN x on the properties of (11 2‾ 2) AlGaN were characterized. It was revealed …

The spatial distribution of luminescence in Si-doped AlGaN epitaxial layers that differ in Al
content and Si concentration has been studied by cathodoluminescence (CL) mapping in …

High resolution X-ray coplanar (symmetric X-ray diffraction (SXRD) and asymmetric X-ray
diffraction (ASXRD)) and non-coplanar diffraction (grazing incidence diffraction (GID)) have …

Herein, the investigation of the defects present on the surface of strained AlGaN/GaN
heterostructures grown on Si (111), with and without an in situ deposited SixNx nanomask …

We have performed a detailed investigation of the molecular beam epitaxy of AlGaN
epilayers on AlN template on sapphire substrate. The effects of various growth parameters …