Time-to-digital converters (TDCs) are high-performance mixed-signal circuits capable of
timestamping events with sub-gate delay resolution. As a result of their high-performance, in …

Integrated photodetectors are essential components of scalable photonics platforms for
quantum and classical applications. However, most efforts in the development of such …

This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in
standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) …

Silicon single-photon avalanche diodes (Si-SPADs) fabricated with standard CMOS
technology and providing the advantages of low noise, low cost, and compatibility with …

We investigate the area-dependent characteristics of photodetection frequency responses of
850-nm silicon avalanche photodetectors (APDs) fabricated with standard complementary …

In this article, the performance of midwavelength infrared (MWIR) HgCdTe electron
avalanche photodiodes (e-APDs) with variable annealing processes and guard ring design …

This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a
small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an …

This paper discusses design optimization for silicon avalanche photodetectors (APDs)
fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology in …

This paper presents a CMOS-integrated linear-mode avalanche photodiode based on
electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide …

Avalanche photodetectors (APDs) improve the sensitivity of optoelectronic (O/E) receivers
(RXs) due to their high multiplication gain and responsivity. When implemented …