Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes
Stress/strain engineering techniques are employed to boost the performance of Gate-all-
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …
Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 nm, 7 nm and 5 nm node technologies
A Lazzaz, K Bousbahi, M Ghamnia - Facta universitatis-series …, 2023 - doiserbia.nb.rs
Advancement in the semiconductor industry has transformed modern society. A
miniaturization of a silicon transistor is continuing following Moore's empirical law. The …
miniaturization of a silicon transistor is continuing following Moore's empirical law. The …
Optimization and analysis of Si/SiGe strained vertically stacked heterostructure on insulator FeFinFET for high performance analog and RF applications
As semiconductor technology advances, the exploration of novel materials and device
architectures becomes imperative to meet the growing demands of integrated circuits for …
architectures becomes imperative to meet the growing demands of integrated circuits for …
Silicon and germanium vertical super-thin body (VSTB) FET: a comparative performance overview including architectural stress-strain impact
This article aims to develop a comprehensive understanding of the comparative
performance of a vertical super-thin body (VSTB) FET in terms of two device material …
performance of a vertical super-thin body (VSTB) FET in terms of two device material …
A PAM-4 100 Gbps single-drive strained SiGe optical lumped Mach-Zehnder modulator for O-band application
We propose the carrier-depletion type strained SiGe optical lumped Mach-Zehnder
modulators (MZMs) with L-shape PN junction (LSPN) with a highly CMOS-compatible …
modulators (MZMs) with L-shape PN junction (LSPN) with a highly CMOS-compatible …
[图书][B] Stress and strain engineering at nanoscale in semiconductor devices
CK Maiti - 2021 - books.google.com
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts
are being made to co-integrate various functionalities (More-than-Moore) in a single chip …
are being made to co-integrate various functionalities (More-than-Moore) in a single chip …
Temperature characterization and performance enhancement of a 7nm finfet structure using hk materials and gaas as metal gate (mg)
MA Muqeet, TR Babu - International Journal of …, 2024 - ejournal.unimap.edu.my
The progress in semiconductor technology has played a crucial role in enhancing human
existence by introducing significant innovations. The pursuit of high-performance devices …
existence by introducing significant innovations. The pursuit of high-performance devices …
Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy
L Li, R Bi, Z Dong, C Ye, J Xie, C Wang, X Li, KL Pey… - Electron, 2024 - Wiley Online Library
Three‐dimensional stacked transistors based on Si/SiGe heterojunction are a potential
candidate for future low‐power and high‐performance computing in integrated circuits …
candidate for future low‐power and high‐performance computing in integrated circuits …
Performance Analysis of FinFETs with Strained-Si Fin on Strain-Relaxed Buffer
The architecture of transistors has now switched from planar to the non-planar vertical
structures. The 3-D geometry of such non-planar FinFET structures imposes new challenges …
structures. The 3-D geometry of such non-planar FinFET structures imposes new challenges …
Analysis of Vertically Stacked Ferroelectric Based FinFET for Switching Applications
This paper presents the study of characteristic parameters of ferroelectric based FinFET with
vertically stacked channel engineered ferroelectric based FinFET (VSFe-FinFET) at the …
vertically stacked channel engineered ferroelectric based FinFET (VSFe-FinFET) at the …