Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to
estimate the device temperature in operation, typically assuming a constant thermal …

Silicon carbide (SiC) power devices have the potential to operate at high temperatures
beyond the capabilities of silicon power devices. At increased temperatures, the temperature …

A type of 3.3-kV/450-A half-bridge insulated-gate bipolar transistor power module combining
the silicon (Si) and silicon carbide (SiC) technologies has been developed and reported in …

Thanks to the increasing availability of silicon carbide (SiC) metal oxide semiconductor field
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …

In a high-power semiconductor power module where multiple chips are populated in
parallel, the thermal imbalance problem arises. In this article, the next-generation standard …

Residual lifetime estimation has gained a key point among the techniques that improve the
reliability and the efficiency of power converters. The main cause of failures are the junction …

One of the main failure modes of an insulated-gate bipolar transistor (IGBT) module is the
reconstruction of an aluminum (Al) metallization layer on the surface of the IGBT chip. In this …

Optimized low-inductive layouting of the package interconnections and external PCBs and
bus-bars are necessary to benefit from Silicon Carbide (SiC) power devices, which allow …

A novel approach for extracting dynamic compact thermal models from nonlinear heat
diffusion equations, which take into account the temperature dependence of thermal …

A novel simulation tool, named Thermal Resistance Advanced Calculator, is presented Such
a tool allows the straightforward definition of a parametric detailed thermal model of family of …