CMOS-compatible neuromorphic devices for neuromorphic perception and computing: a review

Y Zhu, H Mao, Y Zhu, X Wang, C Fu, S Ke… - … Journal of Extreme …, 2023 - iopscience.iop.org
Neuromorphic computing is a brain-inspired computing paradigm that aims to construct
efficient, low-power, and adaptive computing systems by emulating the information …

2022 roadmap on neuromorphic computing and engineering

DV Christensen, R Dittmann… - Neuromorphic …, 2022 - iopscience.iop.org
Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …

Advancements in memory technologies for artificial synapses

A Sehgal, S Dhull, S Roy, BK Kaushik - Journal of Materials Chemistry …, 2024 - pubs.rsc.org
Neural networks (NNs) have made significant progress in recent years and have been
applied in a broad range of applications, including speech recognition, image classification …

Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors

CH Choi, T Kim, MJ Kim, SH Yoon… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, the mechanism of stability in amorphous indium-gallium-zinc oxide (-IGZO)
thin-film transistors (TFTs) with a natural length of 8 nm was investigated from the …

Tyrosine-mediated analog resistive switching for artificial neural networks

MK Song, SD Namgung, H Lee, JH Yoon, YW Song… - Nano Research, 2023 - Springer
The fourth industrial revolution indispensably brings explosive data processing and storage;
thus, a new computing paradigm based on artificial intelligence-enabling device structure is …

Two-and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements

H Kang, J Park, D Lee, HW Kim, S Jin… - Neuromorphic …, 2021 - iopscience.iop.org
Synaptic elements based on memory devices play an important role in boosting
neuromorphic system performance. Here, we show two types of fab-friendly HfO 2 material …

Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective

A Padovani, M Pesic, F Nardi, V Milo… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
The advent of Artificial Intelligence (AI) and big data era brought an unprecedented (and
ever growing) need for fast and energy efficient computation that cannot be obtained with …

[PDF][PDF] Material development of doped hafnium oxide for non-volatile ferroelectric memory application

M Lederer - 2022 - researchgate.net
The discovery of ferroelectricity in hafnium oxide spurred a growing research eld due to
hafnium oxides compatibility with processes in microelectronics as well as its unique …

Low-power, linear, and uniform bimodal resistive switching in proton conducting/insulating bilayer-based memristor

JH Yoon, MK Song, YW Song, JM Park… - Journal of Alloys and …, 2024 - Elsevier
The emergence of artificial intelligence (AI) has recently necessitated the processing of big
data. However, a separation between the memory and processing unit leads to significant …

Silicon nanowire charge trapping memory for energy-efficient neuromorphic computing

MHR Ansari, UM Kannan… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This work highlights the utilization of the floating body effect and charge-trapping/de-
trapping phenomenon of a Silicon-nanowire (Si-nanowire) charge-trapping memory for an …