The dynamic current imbalance between paralleled SiC mosfet s can cause unbalanced
switching losses and limit the current capacity. It is essential to investigate the influences of …

Multichip silicon carbide (SiC) power modules with Kelvin-source connections are
commonly used in applications requiring large capacity. As a result of the parasitic effect …

This paper introduces a fully symmetric layout for a 4-parallel SiC MOSFET half-bridge
power module, wherein each power loop within the module exhibits physical and electrical …

Dynamic current imbalance of parallel SiC MOSFETs can lead to uneven losses and even
thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main …

Uneven dynamic currents between paralleled silicon carbide (SiC) metal-oxide-
semiconductor field-effect transistors (mosfet s) can cause unbalanced switching losses …

In multichip SiC power modules, unbalanced dynamic currents between the paralleled dies
can induce unbalanced switching losses and junction temperatures, reducing the device's …

Gallium nitride (GaN) power semiconductors are being explored as promising alternatives
for the next generation of high-power traction inverters, suitable for both high-and low …

Using paralleled SiC MOSFETs is an economical and commonly-used solution for high-
power applications. However, the dynamic unbalanced currents during TURN-ON and …

Silicon carbide MOSFETs are often applied in parallel connection because of low monolithic
current level. However, current imbalance caused by parallel connection challenges the …

The primary objective of this paper is to present the design of a power board specifically
developed to investigate the impact of parameters and layout mismatches of paralleled SiC …