Parasitic capacitive couplings in medium voltage power electronic systems: An overview

BF Kjærsgaard, G Liu, MR Nielsen… - … on Power Electronics, 2023 - ieeexplore.ieee.org
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

A review of isolated bidirectional DC-DC converters for data centers

S Chen, G Zhang, SY Samson, Y Mei… - Chinese Journal of …, 2023 - ieeexplore.ieee.org
In today's fast-paced, information-driven world, data centers can offer high-speed, intricate
capabilities on a larger scale owing to the ever-growing demand for networks and …

Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High

A Anurag, S Acharya, Y Prabowo… - … on Power Electronics, 2018 - ieeexplore.ieee.org
Medium-voltage (MV) silicon carbide (SiC) devices have opened up new areas of
applications which were previously dominated by silicon-based IGBTs. From the perspective …

Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients

DN Dalal, N Christensen, AB Jørgensen… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant
magnitude of the displacement currents through power module parasitic capacitances that …

Design and multiobjective optimization of an auxiliary wireless power transfer converter in medium-voltage modular conversion systems

K Sun, J Wang, R Burgos, D Boroyevich… - … on Power Electronics, 2022 - ieeexplore.ieee.org
This article proposes an optimized design for a wireless power transfer converter serving as
an auxiliary power supply in a medium-voltage, high modular conversion system. A CLLC …

Gate drivers for medium-voltage SiC devices

A Anurag, S Acharya, N Kolli… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

Review on SiC-MOSFET devices and associated gate drivers

LFS Alves, P Lefranc, PO Jeannin… - 2018 IEEE international …, 2018 - ieeexplore.ieee.org
Silicon (Si) power devices have dominated the world of Power Electronics in the last years,
and they have proven to be efficient in a wide range of applications. But high power, high …

Design of a rectangular wave high voltage generator for the evaluation of inverter-fed motor insulation

S Akram, X Liu, P Wang, P Meng… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
The urgent need for the safer operation of inverter-fed motors is leading research to the
qualification tests under high frequency rectangular wave voltages. Consequently, the …

Isolated gate driver for medium-voltage SiC power devices using high-frequency wireless power transfer for a small coupling capacitance

VT Nguyen, VU Pawaskar… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
A high-voltage operation and breakneck switching speed of medium-voltage (MV) silicon
carbide (SiC) devices demand gate drivers (GDs) with high voltage withstanding capability …

High-Power Electronic Applications Enabled by Medium Voltage Silicon-Carbide Technology: An Overview

MR Nielsen, S Deng, AB Mirza… - … on Power Electronics, 2024 - ieeexplore.ieee.org
With the electrification of society and the green transition, the need for efficient high-power
electronic converters (PEC) to support the electricity demand is at an all-time high. A key …