The integration of dissimilar materials into heterostructures has become a powerful tool for
engineering interfaces and electronic structure. The advent of 2D materials has provided …

Low-symmetry layered materials such as black phosphorus (BP) have been revived recently
due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in …

Memristor devices that exhibit high integration density, fast speed, and low power
consumption are candidates for neuromorphic devices. Here, we demonstrate a filament …

Heteroatom doping can facilitate intrinsic activity via the tuning of electronic states. However,
it is still rare to elucidate the role of a specific metal sulfide electronic state and …

The family of emerging low‐symmetry and structural in‐plane anisotropic two‐dimensional
(2D) materials has been expanding rapidly in recent years. As an important emerging …

The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and
ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These …

The lattice dynamics and high-temperature structural transition in SnS and SnSe are
investigated via inelastic neutron scattering, high-resolution Raman spectroscopy and …

Tin (II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film
devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap …

The emergence of atomically thin crystals has allowed extending materials integration to
lateral heterostructures where different 2D materials are covalently connected in the plane …

Group IV monochalcogenides, anisotropic van der Waals crystals (and black phosphorus
analogues), are attracting increasing interest due to a number of exceptional properties …