Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides

X Wang, Y Hu, SY Kim, R Addou, K Cho, RM Wallace - ACS nano, 2023 - ACS Publications
Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties
and potential for application in next-generation electronic devices. However, strong Fermi …

Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and WxMo1–xTe2 Alloy

C Zhang, S Kc, Y Nie, C Liang, WG Vandenberghe… - ACS …, 2016 - ACS Publications
Metal–insulator transitions in low-dimensional materials under ambient conditions are rare
and worth pursuing due to their intriguing physics and rich device applications. Monolayer …

Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule

R Schlaf, O Lang, C Pettenkofer… - Journal of applied …, 1999 - pubs.aip.org
The occurrence of quantum dipoles at layered materials semiconductor heterointerfaces
was investigated by photoemission spectroscopy (PES). Due to the unique properties of …

Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability

R Addou, RM Wallace - ACS applied materials & interfaces, 2016 - ACS Publications
Layered semiconductor compounds represent alternative electronic materials beyond
graphene. WSe2 is one of the two-dimensional materials with wide potential in opto-and …

[PDF][PDF] Photoelectron spectroscopy in materials science and physical chemistry

A Klein, T Mayer, A Thissen, W Jaegermann - Bunsen-Magazin, 2008 - academia.edu
Fundamental questions addressed in physical chemistry and materials science are the
thermodynamics and kinetics of chemical interface reactions involving solids, liquids and …

P-terminated InP (001) surfaces: Surface band bending and reactivity to water

DC Moritz, IA Ruiz Alvarado… - … Applied Materials & …, 2022 - ACS Publications
Stable InP (001) surfaces are characterized by fully occupied and empty surface states close
to the bulk valence and conduction band edges, respectively. The present photoemission …

Temperature-dependent I–V characteristics of In/p-SnSe Schottky diode

H Patel, K Patel, A Patel, H Jagani, KD Patel… - Journal of Electronic …, 2021 - Springer
Tin selenide (SnSe), a member of the IV-VI group, belongs to the layered transition metal
chalcogenide (TMC) family. As TMCs are chemically inert, and have a binary layered …

Influence of Reduced Cu Surface States on the Photoelectrochemical Properties of CuBi2O4

FE Oropeza, BT Feleki, KHL Zhang… - ACS Applied Energy …, 2019 - ACS Publications
The beneficial effect of surface photoreduction on the photoresponse of copper bismuthate
is reported for the first time. A detailed photoemission spectroscopy study (PES) reveals that …

Surface photovoltage measurements on pyrite (100) cleavage planes: Evidence for electronic bulk defects

M Bronold, C Pettenkofer, W Jaegermann - Journal of Applied Physics, 1994 - pubs.aip.org
Temperature dependent contactless surface photovoltage measurements by photoelectron
spectroscopy have been performed on cleaved (100) surfaces of pyrite (F&S,) single …

Tapered Cross‐Section Photoelectron Spectroscopy of State‐of‐the‐Art Mixed Ion Perovskite Solar Cells: Band Bending Profile in the Dark, Photopotential Profile …

M Wussler, T Mayer, C Das, E Mankel… - Advanced Functional …, 2020 - Wiley Online Library
The purpose of this article is twofold. On the one hand the method of spacial resolved
photoemission spectroscopy on small angle tapered cross‐sections (TCS) of complete …