Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …

We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise.
In particular, we clarify how the presence of conduction-band valleys influences spin …

The valley degree of freedom in the electronic band structure of silicon, graphene, and other
materials is often considered to be an obstacle for quantum computing (QC) based on …

Gate-pulse-induced recombination, known as charge pumping (CP), is a fundamental
carrier recombination process, and has been utilized as a method for analyzing the electrical …

Simulating fermions coupled to spin degrees of freedom, relevant for a range of quantum
field theories, represents a promising application for quantum simulators. Mapping fermions …

Electronic band structures in semiconductors are uniquely determined by the constituent
elements of the lattice. For example, bulk silicon has an indirect bandgap and it prohibits …

We propose a main mechanism of large valley splitting experimentally observed at the
interface of buried oxide (BOX)/silicon-on-insulator (SOI) structures. Silicon metal-oxide …

The role of the interface potential on the effective mass of charge carriers is elucidated in this
work. We develop a new theoretical formalism using a spatially dependent effective mass …

Statistical learning is emerging as a new paradigm in science. This has ignited interest
within our inherently quantum world in exploring quantum machines for their advantages in …

The valley splitting of the conduction-band states in a thin silicon-on-insulator layer is
investigated using the 30-band k⋅ p theory. The system composed of a few nm thick $\text …