Photoluminescence study of the interface fluctuation effect for InGaAs/InAlAs/InP single quantum well with different thickness
Y Wang, X Sheng, Q Guo, X Li, S Wang, G Fu… - Nanoscale Research …, 2017 - Springer
Photoluminescence (PL) is investigated as a function of the excitation intensity and
temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well …
temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well …
Photoluminescence spectroscopy of the InAsSb-based pin heterostructure
T Smołka, M Motyka, VV Romanov, KD Moiseev - Materials, 2022 - mdpi.com
Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution
was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs1 …
was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs1 …
Modulated Photoluminescence Mapping of Long-Wavelength Infrared / Type-II Superlattice: In-Plane Optoelectronic Uniformity
X Chen, L Zhu, Y Zhang, F Zhang, S Wang, J Shao - Physical Review Applied, 2021 - APS
In-plane uniformity of narrow-gap semiconductor In As/Ga Sb type-II superlattice (T2SL)
wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength …
wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength …
Spatially resolved and two-dimensional mapping modulated infrared photoluminescence spectroscopy with functional wavelength up to 20 μm
X Chen, L Zhu, J Shao - Review of Scientific Instruments, 2019 - pubs.aip.org
The pixel-scale nonuniformity of the photoelectric response may be due either to the in-
plane electronic inhomogeneity of the narrowgap semiconductor or to the craft fluctuation …
plane electronic inhomogeneity of the narrowgap semiconductor or to the craft fluctuation …
[PDF][PDF] Research Progress of 2–5 μm Mid-Infrared GaSb Semiconductor Materials
P Yu, D Fang, J Tang, X Fang, D Wang, X Wang… - Appl. Phys, 2018 - pdf.hanspub.org
III-V group semiconductors have received a great deal of attention because of their potential
advantages for use in optoelectronic and electronic applications. Among these materials …
advantages for use in optoelectronic and electronic applications. Among these materials …
Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
M Dyksik, M Motyka, M Kurka, K Ryczko… - Optical and Quantum …, 2016 - Springer
Abstract Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on
an InAs substrate were investigated from the point of view of room temperature emission in …
an InAs substrate were investigated from the point of view of room temperature emission in …
Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
Temperature-resolved photoluminescence studies were performed on tensely-strained
AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one …
AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one …
[PDF][PDF] Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern
The article presents the results of diameter mapping for circular-symmetric disturbance of
homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors …
homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors …
Interbandkaskadenlaser für die Gassensorik im Spektralbereich des mittleren Infrarot
R Weih - 2018 - opus.bibliothek.uni-wuerzburg.de
Aufgrund der hohen Sensitivität bei der Absorptionsmessung von Gasen im Spektral-
bereich des mittleren Infrarot steigt die Nachfrage nach monolithischen, kompakten und …
bereich des mittleren Infrarot steigt die Nachfrage nach monolithischen, kompakten und …
[HTML][HTML] 2~ 5 μm 中红外波段GaSb 半导体材料研究进展
余沛， 房丹， 唐吉龙， 方铉， 王登魁， 王新伟， 王晓华… - Applied …, 2018 - hanspub.org
III-V 族半导体材料因其光电子应用中的优势而备受关注. 这些材料中, GaSb 和GaSb
相关半导体材料因具有高的载流子迁移率和较窄的禁带宽度而被认为是中红外波段光电子 …
相关半导体材料因具有高的载流子迁移率和较窄的禁带宽度而被认为是中红外波段光电子 …