This paper describes the latest and most advanced surface-potential-based model jointly
developed by The Pennsylvania State University and Philips. Specific topics include model …

This paper presents a physically based model for the metal-oxide-semiconductor (MOS)
transistor suitable for analysis and design of analog integrated circuits. Static and dynamic …

This is the first book dedicated to the next generation of MOSFET models. Addressed to
circuit designers with an in-depth treatment that appeals to device specialists, the book …

This paper presents an overview of MOS transistor modeling for RF integrated circuit design.
It starts with the description of a physical equivalent circuit that can easily be implemented as …

This work describes an advanced physics-based compact MOSFET model (SP). Both the
quasistatic and nonquasi-static versions of SP are surface-potential-based. The model is …

In this paper, the implications of inversion charge linearization in compact MOS transistor
modeling are discussed. The charge-sheet model provides the basic relation among …

This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …

A particularly simple form of the charge-sheet model (CSM) is developed using symmetric
linearization of the bulk charge as a function of the surface potential. The new formulation is …

The combination of decreasing MOSFET dimensions and increasing use of MOSFETs for
analog and RF application has created the need for advanced compact models for MOSFET …

Most of the new generation compact models for the MOSFET have many commonalities
since they are based on the same main approximations: gradual channel, charge-sheet, and …