We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

The work function and electronic structure of epitaxial graphene as well as of quasi-
freestanding graphene multilayer samples were studied by Kelvin probe and angle resolved …

In this paper, micro-Raman mapping and conductive atomic force microscopy (C-AFM) were
jointly applied to investigate the structural and electrical homogeneity of quasi-free-standing …

The remarkable properties of graphene/SiC heterostructures have demonstrated promise for
use in future power electronics; however, the substrate-induced strain is detrimental to the …

We report on Kelvin probe force microscopy (KPFM) and density functional theory (DFT)
investigations of charge transfers in vertical heterojunctions between tungsten diselenide …

A detailed investigation of the low-frequency noise in graphene/n-Si (100) junctions at
forward and reverse bias has been performed. The graphene has been synthesized directly …

The effects of humidity on the electronic properties of quasi-free standing one layer
graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der …

We report the results of in-depth Raman study of quasi-free-standing monolayer graphene
on the (0001) Si-face of 4H-SiC, which contains~ 0.1–2· 10 11 cm− 2 sp 3 defects that have …

We have performed first-principles calculations of the structural and the electronic properties
of graphene (G) adsorbed (i) on the oxidized SiC surface (G/X/SiC, with X= Si 2 O 3, Si 2 O …

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor
Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer …