Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

This letter reports the polymer passivation of field plated lateral β-Ga 2 O 3 MOSFETs with
significant improvement in the breakdown voltages as compared to non-passivated devices …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

Maintaining high average fields between the gate and drain is imperative in achieving near
theoretical performance in ultra-wide band gap semiconductors like β-Ga 2 O 3. In this letter …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Wide and ultrawide bandgap semiconductors can provide excellent performance due to
their high energy bandgap, which leads to breakdown electric fields that are more than an …

Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …