Learning a convolutional neural network for non-uniform motion blur removal
In this paper, we address the problem of estimating and removing non-uniform motion blur
from a single blurry image. We propose a deep learning approach to predicting the …
from a single blurry image. We propose a deep learning approach to predicting the …
Opportunities and challenges of tunnel FETs
Sustaining of Moore's Law over the next decade will require not only continued scaling of
the physical dimensions of transistors but also performance improvement and aggressive …
the physical dimensions of transistors but also performance improvement and aggressive …
Demonstration of a p-type ferroelectric FET with immediate read-after-write capability
D Kleimaier, H Mulaosmanovic… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and
embedded in GlobalFoundries 28 nm bulk high-metal gate (HKMG) technology (28SLPe) …
embedded in GlobalFoundries 28 nm bulk high-metal gate (HKMG) technology (28SLPe) …
BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities
G Groeseneken, J Franco, M Cho… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
Our present understanding of BTI in Si and (Si) Ge based sub 1-nanometer EOT MOSFET
devices is reviewed and extended to benchmark other Beyond-Si based devices. We …
devices is reviewed and extended to benchmark other Beyond-Si based devices. We …
Understanding and modelling the PBTI reliability of thin-film IGZO transistors
We study the impact of the gate-dielectric on the Positive Bias Temperature Instability (PBTI)
of IGZO thin-film transistors (TFT). We show that PBTI is controlled by the gate-dielectric pre …
of IGZO thin-film transistors (TFT). We show that PBTI is controlled by the gate-dielectric pre …
SiGe channel technology: Superior reliability toward ultrathin EOT devices—Part I: NBTI
We report extensive experimental results of the negative bias temperature instability (NBTI)
reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The …
reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The …
Reliability challenges of real-time systems in forthcoming technology nodes
S Hamdioui, D Gizopoulos, G Guido… - … , Automation & Test …, 2013 - ieeexplore.ieee.org
Forthcoming technology nodes are posing major challenges on the manufacturing of
reliable (real-time) systems: process variations, accelerated degradation aging, as well as …
reliable (real-time) systems: process variations, accelerated degradation aging, as well as …
Channel Hot Carrier Degradation Mechanism in Long/Short Channel -FinFETs
The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long
channel devices, interface degradation by hot carriers mainly degrades the device at the …
channel devices, interface degradation by hot carriers mainly degrades the device at the …
Unified mechanism for positive-and negative-bias temperature instability in GaN MOSFETs
A Guo, JA del Alamo - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs
under moderate positive and negative gate bias stress. We investigate the evolution of …
under moderate positive and negative gate bias stress. We investigate the evolution of …
Performance analysis of gate electrode work function variations in double-gate junctionless FET
With inherent structural simplicity due to the omission of ultrasteep pn junctions, the
conventional junctionless FET can be used as a barrier-controlled device with low OFF …
conventional junctionless FET can be used as a barrier-controlled device with low OFF …