A key issue in the development of high-performance semiconductor devices is the ability to
properly measure active dopants at the nanometer scale. In ap–n junction, the abruptness of …

Ultraviolet GaN photodetectors based on nanowires (NWs) fabricated by top-down
strategies promise improved uniformity, morphology, and doping control with respect to …

Characterizing long‐range electric fields and built‐in potentials in functional materials at
nano to micrometer scales is of supreme importance for optimizing devices, eg, the …

We demonstrate the use of both pixelated differential phase contrast (DPC) scanning
transmission electron microscopy (STEM) and off-axis electron holography (EH) for the …

For the study of magnetic materials at the nanoscale, differential phase contrast (DPC)
imaging is a potent tool. With the advancements in direct detector technology, and …

The electron optical phase contrast probed by electron holography at n-n+ GaN doping
steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than …

Measuring long-range electric fields by 4-dimensional scanning transmission electron
microscopy (4DSTEM) is on the verge to becoming an established method, though …

Abstract DPC in Scanning Transmission Electron Microscopy (STEM) is a valuable method
for mapping the electric fields in semiconductor materials. However, optimising the …

Differential Phase Contrast (DPC) imaging, in which deviations in the bright field beam are
in proportion to the electric field, has been extensively studied in the context of pure elastic …

The measurement of the electric field is of huge interest as its position, orientation and
strength will control the properties of an electronic device. However, this measurement with …