[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices
X Wang, B Wang, Q Zhang, Y Sun, E Wang… - Advanced …, 2021 - Wiley Online Library
Synaptic devices based on 2D‐layered materials have emerged as high‐efficiency
electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices …
electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices …
Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.
R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …
nanoelectronic nonvolatile memories. The three main classes are based on an …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
State of the art of metal oxide memristor devices
Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …
integrated electronic devices for advanced computing and digital and analog circuit …
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
Experimental results on the bistable resistive memory switching in submicron sized NiO
memory cells are presented. By using a current-bias method, intermediate resistance states …
memory cells are presented. By using a current-bias method, intermediate resistance states …
Analog and digital bipolar resistive switching in solution-combustion-processed NiO memristor
Y Li, J Chu, W Duan, G Cai, X Fan… - … applied materials & …, 2018 - ACS Publications
In this study, a NiO-based resistive memristor was manufactured using a solution
combustion method. In this device, both analog and digital bipolar resistive switching were …
combustion method. In this device, both analog and digital bipolar resistive switching were …
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
An implantation doping approach is implemented to fabricate Gd-doped HfO 2 resistive
random access memory (RRAM) devices. The significantly enhanced performances are …
random access memory (RRAM) devices. The significantly enhanced performances are …
Random circuit breaker network model for unipolar resistance switching
The random circuit breaker network model is proposed for unipolar resistance switching
behavior. This model describes reversible dynamic processes involving two quasi …
behavior. This model describes reversible dynamic processes involving two quasi …