[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Emerging memories: resistive switching mechanisms and current status

DS Jeong, R Thomas, RS Katiyar… - Reports on progress …, 2012 - iopscience.iop.org
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices

X Wang, B Wang, Q Zhang, Y Sun, E Wang… - Advanced …, 2021 - Wiley Online Library
Synaptic devices based on 2D‐layered materials have emerged as high‐efficiency
electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices …

Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.

R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

KM Kim, DS Jeong, CS Hwang - Nanotechnology, 2011 - iopscience.iop.org
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …

State of the art of metal oxide memristor devices

B Mohammad, MA Jaoude, V Kumar… - Nanotechnology …, 2016 - degruyter.com
Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee… - Applied physics …, 2006 - pubs.aip.org
Experimental results on the bistable resistive memory switching in submicron sized NiO
memory cells are presented. By using a current-bias method, intermediate resistance states …

Analog and digital bipolar resistive switching in solution-combustion-processed NiO memristor

Y Li, J Chu, W Duan, G Cai, X Fan… - … applied materials & …, 2018 - ACS Publications
In this study, a NiO-based resistive memristor was manufactured using a solution
combustion method. In this device, both analog and digital bipolar resistive switching were …

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han… - Applied Physics …, 2011 - pubs.aip.org
An implantation doping approach is implemented to fabricate Gd-doped HfO 2 resistive
random access memory (RRAM) devices. The significantly enhanced performances are …

Random circuit breaker network model for unipolar resistance switching

SC Chae, JS Lee, S Kim, SB Lee, SH Chang… - Advanced …, 2008 - Wiley Online Library
The random circuit breaker network model is proposed for unipolar resistance switching
behavior. This model describes reversible dynamic processes involving two quasi …