Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

J Martín-Sánchez, R Trotta, A Mariscal… - Semiconductor …, 2018 - iopscience.iop.org
The tailoring of the physical properties of semiconductor nanomaterials by strain has been
gaining increasing attention over the last years for a wide range of applications such as …

Control of Octahedral Tilts and Magnetic Properties of Perovskite Oxide<? format?> Heterostructures by Substrate Symmetry

J He, A Borisevich, SV Kalinin, SJ Pennycook… - Physical review …, 2010 - APS
Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and
distortions are known to affect their electronic and magnetic properties. We report …

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

M Liu, J Hoffman, J Wang, J Zhang… - Scientific reports, 2013 - nature.com
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to
switch between distinct collective states with a control voltage. Small changes in structure …

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

D Pesquera, E Khestanova, M Ghidini, S Zhang… - Nature …, 2020 - nature.com
Epitaxial films may be released from growth substrates and transferred to structurally and
chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides …

Ferroelectric single-crystal gated graphene/hexagonal-BN/ferroelectric field-effect transistor

N Park, H Kang, J Park, Y Lee, Y Yun, JH Lee… - ACS …, 2015 - ACS Publications
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional
(2D) material was examined using a graphene monolayer on a hexagonal boron nitride …

Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

T Nan, M Liu, W Ren, ZG Ye, NX Sun - Scientific Reports, 2014 - nature.com
The central challenge in realizing electronics based on strongly correlated electronic states,
or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective …

Electrical characterization of PMN–28% PT (001) crystals used as thin-film substrates

A Herklotz, JD Plumhof, A Rastelli… - Journal of Applied …, 2010 - pubs.aip.org
Ferroelectric and piezoelectric properties of (001) 0.72 PbMg 1/3 Nb 2/3 O 3–0.28 PbTiO 3
(PMN–28% PT) single crystals have been investigated from cryogenic temperatures to 475 …

Effects of substrate-induced strain on transport properties of and thin films using ferroelectric poling and converse piezoelectric effect

RK Zheng, HU Habermeier, HLW Chan, CL Choy… - Physical Review B …, 2010 - APS
We have investigated the effects of the strain induced by ferroelectric poling (or the converse
piezoelectric effect) on the transport properties of LaMnO 3+ δ and CaMnO 3 thin films …

Magnetism of the tensile-strain-induced tetragonal state of SrRuO films

A Herklotz, M Kataja, K Nenkov, MD Biegalski… - Physical Review B …, 2013 - APS
SrRuO 3 films have been grown in the tetragonal, structurally single-domain state under 1%
of biaxial tensile strain. The angular dependencies of the magnetization and the …

[PDF][PDF] All‐Oxide Crystalline Microelectromechanical Systems: Bending the Functionalities of Transition‐Metal Oxide Thin Films

L Pellegrino, M Biasotti, E Bellingeri, C Bernini… - Advanced …, 2009 - academia.edu
Transition-Metal Oxides (TMO) are of great technological impact due to the numerous
properties they exhibit, like superconductivity, ferroelectricity and piezoelectricity …