Memristor modeling: challenges in theories, simulations, and device variability

L Gao, Q Ren, J Sun, ST Han, Y Zhou - Journal of Materials Chemistry …, 2021 - pubs.rsc.org
This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Analysis of hetero-stacked source TFET and heterostructure vertical TFET as dielectrically modulated label-free biosensors

K Vanlalawmpuia, B Bhowmick - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
This paper reports an extensive comparison of a hetero-stacked source tunnel field effect
transistor (TFET) and heterostructure vertical TFET as label-free biosensors based on …

Sensitivity analysis on dielectric modulated Ge-source DMDG TFET based label-free biosensor

R Saha, Y Hirpara, S Hoque - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This work compares the performance of dielectric modulated (DM) based Ge-source dual
material double gate (DMDG) Tunnel Field Effect Transistor (TFET) and conventional (C) …

Numerical Simulation of N+ Source Pocket PIN-GAA-Tunnel FET: Impact of Interface Trap Charges and Temperature

J Madan, R Chaujar - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
This paper investigates the reliability of PINgate-all-around (GAA)-tunnel field-effect
transistor (TFET) with N±source pocket. The reliability of the PNIN-GAA-TFET is examined …

Gate drain underlapped-PNIN-GAA-TFET for comprehensively upgraded analog/RF performance

J Madan, R Chaujar - Superlattices and Microstructures, 2017 - Elsevier
This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on
cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is …

GaSb/GaAs Type-II heterojunction TFET on SELBOX Substrate for dielectric modulated label-free biosensing application

AK Singh, MR Tripathy, K Baral… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A novel GaSb/GaAs type-II heterojunction TFET on SELBOX substrate (HJ-STFET)-based
dielectric-modulated ultrasensitive label-free biosensor has been demonstrated in this …

Effect of temperature in selective buried oxide TFET in the presence of trap and its RF analysis

P Ghosh, B Bhowmick - … of RF and Microwave Computer‐Aided …, 2020 - Wiley Online Library
This work explores the temperature associated reliability issues of selective buried oxide
(SELBOX) TFET. The proposed device is optimized for maximum ION/IOFF ratio considering …

TCAD simulation of single-event-transient effects in L-shaped channel tunneling field-effect transistors

Q Wang, H Liu, S Wang, S Chen - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Tunnel field-effect transistors (TFETs) have promising structures for future ultrascaled
devices thanks to their capability in reducing swing threshold and short channel effects. In …

Temperature associated reliability issues of heterogeneous gate dielectric—gate all around—tunnel FET

J Madan, R Chaujar - IEEE Transactions on nanotechnology, 2017 - ieeexplore.ieee.org
In this paper, the temperature associated reliability issues of heterogeneous gate dielectric-
gate all around-tunnel FET (HD GAA TFET) has been addressed, and the results are …

Analytical modeling and simulation-based optimization of broken gate TFET structure for low power applications

R Dutta, SK Sarkar - IEEE transactions on electron devices, 2019 - ieeexplore.ieee.org
In this paper, we have reported a renovated silicon-based tunnel field-effect transistor
(TFET) structure with a channel length of 21 nm. The proposed structure has been optimized …