Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …

Cracking of GaN on Si usually occurs due to the large thermal mismatch of GaN and Si
when layer thicknesses exceed approximately 1 μm in metalorganic chemical vapor …

Manufacturing necessitates the transformation of raw materials from their initial form into
finished, functional products. This change is achieved by a variety of processes, each of …

We report the growth of non-polar GaN and AlGaN films on Si (111) substrates by plasma-
assisted metal-organic chemical vapor deposition (PA-MOCVD). Low-temperature growth of …

GaN thin film was deposited by sol–gel spin coating method with a sputtered GaN buffer
layer. The structural, morphological and optical characteristics of the sputtered GaN buffer …

We have investigated growth mechanisms of GaN on Si (111) by pulsed laser deposition
(PLD) using reflection high energy electron diffraction (RHEED) and X-ray photoelectron …

Field emitters based on ZnO nanowires and other nanomaterials are promising high-
brightness electron sources for field emission display, microscopy and other applications …

This paper reports on the fabrication of In x Ga 1− x N (InGaN) layers with various
compositions ranging from InN to GaN using a cost-effective low-temperature plasma …

GaN films have been grown at 1050° C on porous silicon (PS) substrates by metalorganic
vapour phase epitaxy. The annealing phase of PS has been studied in temperature range …