Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …

Ion-induced degradation and catastrophic failures in high-voltage SiC junction barrier
Schottky power diodes are investigated. The experimental results agree with earlier data …

Experimental characterization of the damage induced to SiC power MOSFETs by heavy-ion
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power
diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to …

Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …

This article presents the results of a 2-D finite element simulation study of the gate damages
induced by heavy-ion irradiation in SiC power metal-oxide-semiconductor field-effect …

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes
exhibits a strong dependence on the ion angle of incidence. This effect is studied …

A study is presented aimed at describing phenomena involved in Single Event Burnout
induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data …

The paper reports the results of a study based on experimental data and finite element
simulations about the failure mechanism of 650 V p-doped GaN power HEMT operated in …

Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation Page 1 Results
Tables III and IV summarize results of the discrete power diode and MOSFET responses to …