Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0 …
In this work, we present the results of an investigation into the effectiveness of varying
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide …
The inversion behaviors of atomic-layer-deposition Al 2 O 3/n-In 0.53 Ga 0.47 As metal-
oxide-semiconductor capacitors are studied by various surface treatments and …
oxide-semiconductor capacitors are studied by various surface treatments and …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods
É O'Connor, S Monaghan, RD Long… - Applied Physics …, 2009 - pubs.aip.org
Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited
HfO 2 on n-type GaAs or In x Ga 1− x As (x= 0.53, 0.30, 0.15) epitaxial layers were …
HfO 2 on n-type GaAs or In x Ga 1− x As (x= 0.53, 0.30, 0.15) epitaxial layers were …
Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
The origin of the anomalous frequency dispersion in accumulation capacitance of metal-
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …
Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission
A high resolution synchrotron radiation core level photoemission study of the native oxides
on In 0.53 Ga 0.47 As was carried out in order to determine the various oxidation states …
on In 0.53 Ga 0.47 As was carried out in order to determine the various oxidation states …