Comparison of etch characteristics of KOH, TMAH and EDP for bulk micromachining of silicon (110)

S Dutta, M Imran, P Kumar, R Pal, P Datta… - Microsystem …, 2011 - Springer
Bulk micromachining in Si (110) wafer is an essential process for fabricating vertical
microstructures by wet chemical etching. We compared the anisotropic etching properties of …

Design and fabrication of SOI technology based MEMS differential capacitive accelerometer structure

N Gupta, S Dutta, A Panchal, I Yadav, S Kumar… - Journal of Materials …, 2019 - Springer
This paper discusses the design and fabrication of MEMS differential capacitive
accelerometer (z-axis sensitive) structure. The accelerometer structure consists of one each …

Influence of deep reactive ion etching process parameters on etch selectivity and anisotropy in stacked silicon substrates for fabrication of comb-type MEMS capacitive …

S Dutta, I Yadav, P Kumar, R Pal - Journal of Materials Science: Materials …, 2023 - Springer
This paper presents etching optimization of comb structure formation in small silicon
substrates mounted on a large silicon wafer (150 mm diameter) using the S1818 photoresist …

Effect of vacuum packaging on bandwidth of push–pull type capacitive accelerometer structure

S Dutta, P Saxena, A Panchal, R Pal, KK Jain… - Microsystem …, 2018 - Springer
This paper presents the effect of vacuum packaging on the band-width of push–pull type
capacitive accelerometer structure. The accelerometer structure (for±30 g application) …

Diffusion induced residual stress in comb-type microaccelerometer structure

S Dutta, Shaveta, M Imran, R Pal, RK Bhan - Journal of Materials Science …, 2014 - Springer
This paper presents the effect of residual stresses due to deep boron diffusion on
microaccelerometer structure. The microaccelerometer structure was simulated at various …

Lapping assisted dissolved wafer process of silicon for MEMS structures

S Dutta, M Kumar, S Kumar, M Imran, I Yadav… - Journal of Materials …, 2014 - Springer
Dissolved wafer process (DWP) is being extensively used to fabricate complex micro-electro-
mechanical system (MEMS) structures. Etching non-uniformity, increased surface roughness …

Estimation of bending of micromachined gold cantilever due to residual stress

S Dutta, M Imran, A Pandey, T Saha, I Yadav… - Journal of Materials …, 2014 - Springer
Electroplated gold is widely used as the material for the micromachined beam structures due
to its excellent electrical and mechanical properties. This work attempts to analyze the …

Characterization of SOI technology based MEMS differential capacitive accelerometer and its estimation of resolution by near vertical tilt angle measurements

Y Parmar, N Gupta, V Gond, SS Lamba… - Microsystem …, 2020 - Springer
This paper discusses the evaluation and testing of MEMS capacitive accelerometer (z-axis
sensitive) fabricated using silicon-on-insulator (SOI) wafer. The accelerometer structure …

Comparison of residual stress in deep boron diffused silicon (100),(110) and (111) wafers

S Dutta, G Saxena, K Jindal, R Pal, V Gupta… - Materials Letters, 2013 - Elsevier
Deep boron diffused p++ silicon layer is a powerful tool in determining the thickness of bulk
micromachined MEMS structures. However, due to the large incorporation of boron atoms …

Estimation of boron diffusion induced residual stress in silicon by wafer curvature technique

S Dutta, A Pandey, M Singh, R Pal - Materials Letters, 2016 - Elsevier
Heavily boron doped silicon layer is being used to control the thickness of the bulk micro-
machined micro-electro-mechanical system (MEMS) based structures. Residual stress …