Towards high efficiency nanowire solar cells

G Otnes, MT Borgström - Nano Today, 2017 - Elsevier
Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

III-Nitride nanowire optoelectronics

S Zhao, HPT Nguyen, MG Kibria, Z Mi - Progress in Quantum Electronics, 2015 - Elsevier
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Directional lasing in resonant semiconductor nanoantenna arrays

ST Ha, YH Fu, NK Emani, Z Pan, RM Bakker… - Nature …, 2018 - nature.com
High-index dielectric and semiconductor nanoparticles supporting strong electric and
magnetic resonances have drawn significant attention in recent years. However, until now …

Room-temperature near-infrared high-Q perovskite whispering-gallery planar nanolasers

Q Zhang, ST Ha, X Liu, TC Sum, Q Xiong - Nano letters, 2014 - ACS Publications
Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true
integration of optoelectronic circuitry. 1 Although significant progress has been made in III–V …

Optically pumped room-temperature GaAs nanowire lasers

D Saxena, S Mokkapati, P Parkinson, N Jiang… - Nature …, 2013 - nature.com
Near-infrared lasers are important for optical data communication, spectroscopy and
medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of …

A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

I Åberg, G Vescovi, D Asoli, U Naseem… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
A GaAs nanowire array solar cell with an independently verified solar energy conversion
efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1. 5g solar illumination at 1 …

Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions

X Yuan, D Pan, Y Zhou, X Zhang, K Peng… - Applied Physics …, 2021 - pubs.aip.org
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Achieving Record-High Photoelectrochemical Photoresponse Characteristics by Employing Co3O4 Nanoclusters as Hole Charging Layer for Underwater Optical …

Y Kang, D Wang, Y Gao, S Guo, K Hu, B Liu, S Fang… - ACS …, 2023 - ACS Publications
The physicochemical properties of a semiconductor surface, especially in low-dimensional
nanostructures, determine the electrical and optical behavior of the devices. Thereby, the …

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

HJ Joyce, CJ Docherty, Q Gao, HH Tan… - …, 2013 - iopscience.iop.org
We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–
V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique …

Enhanced electrical and thermal conduction in graphene-encapsulated copper nanowires

R Mehta, S Chugh, Z Chen - Nano letters, 2015 - ACS Publications
Highly conductive copper nanowires (CuNWs) are essential for efficient data transfer and
heat conduction in wide ranging applications like high-performance semiconductor chips …