3,357,961 A 12/1967 Makowski et al. 4,542,870 A 9, 1985 Howell 5,049,516 A 9, 1991
Arima 5,119,329 A 6, 1992 Evans et al. 5,252,370 A 10/1993 Tominaga et al. 5,304,622 A 4 …

(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a
substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may …

Dielectric layers containing a Zirconium-doped tantalum oxide layer, where the Zirconium-
doped tantalum oxide layer can be formed of one or more monolayers of tantalum oxide …

(57) ABSTRACT A dielectric film containing Zirconium-doped tantalum oxide arranged as a
structure of one or more monolayers and a method of fabricating such a dielectric film …

We present a study of the inkjet printing of tantalum-oxide-based dielectric structures on
indium-tin-oxide-coated glass. Ta-Al-Si-alkoxide-based ink formulations with 2 …

This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-
IGZO) thin-film transistors (TFTs) with a Ta 2 O 5 gate dielectric under monochromatic …

The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (H? O)
doped with dysprosium (Dy) and a method of fabricating Such a combination gate and …

6,534,420 B2 3/2003 Ahn et al. 2001/0041250 A1 11/2001 Werkhoven et al. 6,538,330 B1
3/2003 Forbes 2001/0055838 A1 12/2001 Walker et al................ 438,129 6,541,280 B2 …

US7374964B2 - Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics - Google
Patents US7374964B2 - Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics …