The ultrasonic elliptical vibration cutting (UEVC) has been proved to be a valid method to
improve surface quality and reduce subsurface damage of tungsten. However, it is still a …

Ga 2 O 3 is an ultrawide-bandgap semiconductor with a variety of crystal configurations,
which has the potential for a variety of applications, especially in power electronics and …

β-Ga2O3 is an ultrawide-band gap semiconductor with excellent potential for high-power
and ultraviolet optoelectronic device applications. Low thermal conductivity is one of the …

AlN/diamond heterostructures hold tremendous promise for the development of next-
generation high-power electronic devices due to their ultrawide band gaps and other …

This study utilizes molecular dynamics simulation to explore the mechanical and friction
properties of CuTa/Graphene A/GR multilayers during nanoscratching. By investigating the …

Revealing the heat transport mechanism in typical heterostructures is crucial for designing
GaN power chips with better engineering heat transfer performance. Herein, the effect of …

The phonon transport processes within a few atomic layers near heterointerfaces play a
crucial role in thermoelectric applications such as nitride-based high electron mobility …

Rolling and annealing are common composite processes of Copper/Aluminum composites
(Cu/Al), but the formation of intermetallic compounds (IMCs) at Cu/Al interfaces and their …

Thermal interface material (TIM) has a great potential for efficient heat management and
safety of electronic devices. However, achieving high performance polymer-based TIM is still …

Aluminum nitride (AlN) is an ultrawide-bandgap semiconductor with excellent potential for
high-power applications. However, the heat dissipation issue remains a huge challenge for …