Surface/subsurface formation mechanism of tungsten during ultrasonic elliptical vibration cutting
H Wang, Z Dong, C Wang, R Kang, X Guo… - International Journal of …, 2024 - Elsevier
The ultrasonic elliptical vibration cutting (UEVC) has been proved to be a valid method to
improve surface quality and reduce subsurface damage of tungsten. However, it is still a …
improve surface quality and reduce subsurface damage of tungsten. However, it is still a …
A neuroevolution potential for predicting the thermal conductivity of α, β, and ε-Ga2O3
Ga 2 O 3 is an ultrawide-bandgap semiconductor with a variety of crystal configurations,
which has the potential for a variety of applications, especially in power electronics and …
which has the potential for a variety of applications, especially in power electronics and …
Insight into Interfacial Heat Transfer of β-Ga2O3/Diamond Heterostructures via the Machine Learning Potential
Z Sun, D Zhang, Z Qi, Q Wang, X Sun… - … Applied Materials & …, 2024 - ACS Publications
β-Ga2O3 is an ultrawide-band gap semiconductor with excellent potential for high-power
and ultraviolet optoelectronic device applications. Low thermal conductivity is one of the …
and ultraviolet optoelectronic device applications. Low thermal conductivity is one of the …
Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties
Z Qi, X Sun, Z Sun, Q Wang, D Zhang… - … Applied Materials & …, 2024 - ACS Publications
AlN/diamond heterostructures hold tremendous promise for the development of next-
generation high-power electronic devices due to their ultrawide band gaps and other …
generation high-power electronic devices due to their ultrawide band gaps and other …
An atomic-scale insight into mechanical enhancement and frictional properties of amorphous/graphene multilayers
This study utilizes molecular dynamics simulation to explore the mechanical and friction
properties of CuTa/Graphene A/GR multilayers during nanoscratching. By investigating the …
properties of CuTa/Graphene A/GR multilayers during nanoscratching. By investigating the …
Modulation of the interfacial thermal resistances of the w-AlN/Graphene/3C-SiC interface by nanoscale nonplanar feature structures
Revealing the heat transport mechanism in typical heterostructures is crucial for designing
GaN power chips with better engineering heat transfer performance. Herein, the effect of …
GaN power chips with better engineering heat transfer performance. Herein, the effect of …
Modulation of localized phonon thermal transport at GaN/AlxGa1-xN heterointerface: Polar surface, doping, and compressive Strain
J Chen, G Chen, Z Wang, D Tang - International Journal of Heat and Mass …, 2024 - Elsevier
The phonon transport processes within a few atomic layers near heterointerfaces play a
crucial role in thermoelectric applications such as nitride-based high electron mobility …
crucial role in thermoelectric applications such as nitride-based high electron mobility …
[HTML][HTML] Formation and effect of intermetallic compounds in the interface of copper/aluminum composites under rolling conditions
J Li, Y Feng, M Zhang, F Sun, F Chu - Journal of Materials Research and …, 2024 - Elsevier
Rolling and annealing are common composite processes of Copper/Aluminum composites
(Cu/Al), but the formation of intermetallic compounds (IMCs) at Cu/Al interfaces and their …
(Cu/Al), but the formation of intermetallic compounds (IMCs) at Cu/Al interfaces and their …
MXene grafted porous carbon cloth with alumina for high thermal conductivity and EMI shielding effect
W Lee, M Kim, J Kim - Composites Science and Technology, 2024 - Elsevier
Thermal interface material (TIM) has a great potential for efficient heat management and
safety of electronic devices. However, achieving high performance polymer-based TIM is still …
safety of electronic devices. However, achieving high performance polymer-based TIM is still …
Investigating thermal transport across the AlN/diamond Interface via the machine learning potential
Aluminum nitride (AlN) is an ultrawide-bandgap semiconductor with excellent potential for
high-power applications. However, the heat dissipation issue remains a huge challenge for …
high-power applications. However, the heat dissipation issue remains a huge challenge for …