A review on GaN-based two-terminal devices grown on Si substrates
Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
Fully-vertical GaN-on-SiC Schottky barrier diode: Role of conductive buffer structure
Y Li, S Yang, K Liu, K Cheng, K Sheng… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article reports a low ON-resistance fully-vertical GaN-on-SiC Schottky barrier diode
(SBD) featuring a highly conductive buffer structure between the GaN drift layer and SiC …
(SBD) featuring a highly conductive buffer structure between the GaN drift layer and SiC …
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
In this study, the effects of AlN/GaN superlattice (SL) thickness on performances of
AlGaN/GaN high electron mobility transistor (HEMT) heterostructure grown by metal-organic …
AlGaN/GaN high electron mobility transistor (HEMT) heterostructure grown by metal-organic …
Demonstration of fully‐vertical GaN‐on‐Si power MOSFETs using regrowth technique
D Biswas, N Torii, K Yamamoto, T Egawa - Electronics Letters, 2019 - Wiley Online Library
The authors are reporting for the first time the fabrication of GaN‐based fully‐vertical high‐
power metal‐oxide‐semiconductor field effect transistors on Si. The electrical measurements …
power metal‐oxide‐semiconductor field effect transistors on Si. The electrical measurements …
Epitaxial regrowth and characterizations of vertical GaN transistors on silicon
D Biswas, N Torii, K Yamamoto… - … Science and Technology, 2019 - iopscience.iop.org
We report the fabrication of fully-vertical GaN-based metal-oxide-semiconductor field-effect
transistors (V-MOSFETs) on Si. A p-GaN current aperture was introduced in the vertical …
transistors (V-MOSFETs) on Si. A p-GaN current aperture was introduced in the vertical …