Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …
technology which is considered one of the most standout emerging memory technologies …
Defect engineering of ZnO: Review on oxygen and zinc vacancies
V Gurylev, TP Perng - Journal of the European Ceramic Society, 2021 - Elsevier
ZnO is an important material which has been widely applied in photodetector, catalyst, gas
sensor, field emitter, etc. Yet, its inability to absorb visible light, poor charge transport, and …
sensor, field emitter, etc. Yet, its inability to absorb visible light, poor charge transport, and …
Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Recent developments and perspectives for memristive devices based on metal oxide nanowires
Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …
technological limitations for realizing next‐generation memories, logic applications, and …
The strategies of filament control for improving the resistive switching performance
With the rapid application of artificial intelligence in daily life and work, the traditional von
Neumann architecture device faces the limitation of scalability and high energy …
Neumann architecture device faces the limitation of scalability and high energy …
Improving linearity by introducing Al in HfO2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak… - …, 2019 - iopscience.iop.org
Artificial synapse having good linearity is crucial to achieve an efficient learning process in
neuromorphic computing. It is found that the synaptic linearity can be enhanced by …
neuromorphic computing. It is found that the synaptic linearity can be enhanced by …
Biomaterial-based nonvolatile resistive memory devices toward ecofriendliness and biocompatibility
Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of
leaving adverse effects on the environment due to the use of toxic and nondegradable …
leaving adverse effects on the environment due to the use of toxic and nondegradable …
Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses
A stable and highly controllable multistate analog memory system was developed using ZnO-
based memristors. Indium–tin oxide (ITO)/ZnO/ITO memristors exhibited electrical and …
based memristors. Indium–tin oxide (ITO)/ZnO/ITO memristors exhibited electrical and …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …