Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Defect engineering of ZnO: Review on oxygen and zinc vacancies

V Gurylev, TP Perng - Journal of the European Ceramic Society, 2021 - Elsevier
ZnO is an important material which has been widely applied in photodetector, catalyst, gas
sensor, field emitter, etc. Yet, its inability to absorb visible light, poor charge transport, and …

Binary metal oxide-based resistive switching memory devices: A status review

AR Patil, TD Dongale, RK Kamat, KY Rajpure - Materials Today …, 2023 - Elsevier
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

R Khan, N Ilyas, MZM Shamim, MI Khan… - Journal of Materials …, 2021 - pubs.rsc.org
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Recent developments and perspectives for memristive devices based on metal oxide nanowires

G Milano, S Porro, I Valov… - Advanced Electronic …, 2019 - Wiley Online Library
Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

The strategies of filament control for improving the resistive switching performance

T Li, H Yu, SHY Chen, Y Zhou, ST Han - Journal of Materials Chemistry …, 2020 - pubs.rsc.org
With the rapid application of artificial intelligence in daily life and work, the traditional von
Neumann architecture device faces the limitation of scalability and high energy …

Improving linearity by introducing Al in HfO2 as a memristor synapse device

S Chandrasekaran, FM Simanjuntak… - …, 2019 - iopscience.iop.org
Artificial synapse having good linearity is crucial to achieve an efficient learning process in
neuromorphic computing. It is found that the synaptic linearity can be enhanced by …

Biomaterial-based nonvolatile resistive memory devices toward ecofriendliness and biocompatibility

MM Rehman, HMM ur Rehman, WY Kim… - ACS Applied …, 2021 - ACS Publications
Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of
leaving adverse effects on the environment due to the use of toxic and nondegradable …

Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses

C Mahata, J Park, M Ismail, S Kim - Journal of Alloys and Compounds, 2023 - Elsevier
A stable and highly controllable multistate analog memory system was developed using ZnO-
based memristors. Indium–tin oxide (ITO)/ZnO/ITO memristors exhibited electrical and …

A collective study on modeling and simulation of resistive random access memory

D Panda, PP Sahu, TY Tseng - Nanoscale research letters, 2018 - Springer
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …