Emerging programs in a new field of technology that employs quantum mechanical
principles in engineered devices has driven new approaches to atomic-scale fabrication. Of …

We demonstrate a capability of deterministic doping at the single atom level using a
combination of direct write focused ion beam and solid-state ion detectors. The focused ion …

A quantum bit computing architecture includes a plurality of single spin memory donor atoms
embedded in a semiconductor layer, a plurality of quantum dots arranged with the …

The formation of quantum computer test structures in silicon by ion implantation enables the
characterization of spin readout mechanisms with ensembles of dopant atoms and the …

Single dopant atoms can affect transport properties in scaled semiconductor devices and
coherent control of spin and charge degrees of freedom of single dopant atoms promises to …

We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We
model the effects through a statistical analysis, which considers the three-dimensional …

We report on the fabrication of transistors in a FinFET geometry using isotopically purified
silicon-28-on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon …

We describe an approach to quantum computer technology based on engineered single
donor atoms implanted into silicon. We exploit quantum superposition and entanglement in …

This chapter introduces the applications of active cantilever probes for imaging and
nanofabrication in AFM systems. Initially, an overview of the system integration procedure for …

Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates
that combine long coherence times with the fabrication finesse of the silicon nanotechnology …